Browse "School of Electrical Engineering(전기및전자공학부)" by Subject TRAPS
Showing results 1 to 6 of 6
| Annealing of Fowler-Nordheim stress-induced leakage currents in thin silicon dioxide films Ang, CH; Ling, CH; Cheng, ZY; Kim, SJ; Cho, Byung Jin, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.147, no.12, pp.4676 - 4682, 2000-12 |
| Comprehensive modeling of resistive switching in the Al/TiOx/TiO2/Al heterostructure based on space-charge-limited conduction Kim, Sung-Ho; Jeong, Hu-Young; Choi, Sung-Yool; Choi, Yang-Kyu, APPLIED PHYSICS LETTERS, v.97, no.3, 2010-07 |
| Experimental evidence of interface-controlled mechanism of quasi-breakdown in ultrathin gate oxide Guan, H; Cho, Byung Jin; Li, MF; Xu, Z; He, YD; Dong, Z, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.48, no.5, pp.1010 - 1013, 2001-05 |
| Negative bias temperature instability on plasma-nitrided silicon dioxide film Ang, CH; Lek, CM; Tan, SS; Cho, Byung Jin; Chen, TP; Lin, WH; Zhen, JZ, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, v.41, no.3B, pp.314 - 316, 2002-03 |
| Performance comparison of wet-etched and dry-etched Geiger-mode avalanche photodiodes using a single diffusion process Lee, Ki Won; Yang, Kyounghoon, PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, v.10, no.11, pp.1445 - 1447, 2013-11 |
| Reduction of stress-induced leakage currents in thin oxides by application of a low post-stress gate bias Ang, CH; Ling, CH; Cheng, ZY; Cho, Byung Jin; Kim, SJ, JOURNAL OF APPLIED PHYSICS, v.88, no.5, pp.3087 - 3089, 2000-09 |
Discover
Open Access
- 573 OA Article
Date issued
- 5,011 2020 - 2024
- 18,940 2010 - 2019
- 15,019 2000 - 2009
- 7,644 1990 - 1999
- 2,391 1980 - 1989