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Analysis of Fluorine Effects on Charge-Trap Flash Memory of W/TiN/Al2O3/Si3N4/SiO2/Poly-Si Gate Stack Lee, Tae Yoon; Lee, Seung Hwan; Son, Jun Woo; Lee, Sang Jae; Bong, Jae Hoon; Shin, Eui Joong; Kim, Sung Ho; et al, SOLID-STATE ELECTRONICS, v.164, pp.107713, 2020-02 |
Critical role of top interface layer on the bipolar resistive switching of Al/PEDOT:PSS/Al memory device Kim, Jong Yun; Jeong, Hu Young; Kim, Jeong Won; Yoon, Tae Hyun; Choi, Sung-Yool, CURRENT APPLIED PHYSICS, v.11, no.2, pp.35 - 39, 2011-03 |
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