Showing results 1 to 4 of 4
Bipolar resistive switching characteristics of poly(3,4-ethylene-dioxythiophene): Poly(styrenesulfonate) thin film Jeong, Hu Young; Kim, Jong Yun; Yoon, Tae Hyun; Choi, Sung-Yool, CURRENT APPLIED PHYSICS, v.10, no.1, pp.E46 - E49, 2010-01 |
Excellent Resistive Switching Performance of Cu-Se-Based Atomic Switch Using Lanthanide Metal Nanolayer at the Cu-Se/Al2O3 Interface Woo, Hyunsuk; Vishwanath, Sujaya Kumar; Jeon, Sanghun, ACS APPLIED MATERIALS & INTERFACES, v.10, no.9, pp.8124 - 8131, 2018-03 |
Extremely Large Gate Modulation in Vertical Graphene/WSe2 Heterojunction Barristor Based on a Novel Transport Mechanism Shim, Jaewoo; Kim, Hyo Seok; Shim, Yoon Su; Kang, Dong-Ho; Park, Hyung-Youl; Lee, Jaehyeong; Jeon, Jaeho; et al, ADVANCED MATERIALS, v.28, no.26, pp.5293 - +, 2016-07 |
Porphyrin-Silicon Hybrid Field-Effect Transistor with Individually Addressable Top-gate Structure Seol, Myeong-Lok; Choi, Sung-Jin; Kim, Chang-Hoon; Moon, Dong-Il; Choi, Yang-Kyu, ACS NANO, v.6, no.1, pp.183 - 189, 2012-01 |
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