Showing results 1 to 1 of 1
Capacitor-Less 4F(2) DRAM Using Vertical InGaAs Junction for Ultimate Cell Scalability Kim, Joon Pyo; Sim, Jaeho; Bidenko, Pavlo; Geum, Dae-Myeong; Kim, Seong Kwang; Shim, Joonsup; Kim, Jongmin; et al, IEEE ELECTRON DEVICE LETTERS, v.43, no.11, pp.1834 - 1837, 2022-11 |
Discover