Browse "School of Electrical Engineering(전기및전자공학부)" by Subject HEMTS
Showing results 1 to 5 of 5
| Effects of Back Metal on the DC and RF Characteristics of 3D Stacked InGaAs RF Device for Monolithic 3D RF Applications Jeong, Jaeyong; Kim, Seong Kwang; Kim, Jongmin; Geum, Dae-Myeong; Kim, Sanghyeon, IEEE ELECTRON DEVICE LETTERS, v.44, no.4, pp.598 - 601, 2023-04 |
| Identification of room temperature photoluminescence in pseudomorphic modulation-doped AlGaAs/InGaAs/GaAs quantum wells Lu, W; Ng, GI; Jogai, B; Lee, JH; Park, Chul Soon, JOURNAL OF APPLIED PHYSICS, v.82, no.3, pp.1345 - 1349, 1997-08 |
| Low-noise AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor recessed by electron cyclotron resonance plasma etching Lee, JH; Choi, HT; Lee, CW; Yoon, HS; Park, BS; Park, Chul Soon, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.34, no.2, pp.150 - 153, 1999-02 |
| Pseudomorphic AlGaAs/InGaAs/GaAs High Electron Mobility Transistors with Super Low Noise Performances of 0.41 dB at 18 GHz Lee, JH; Yoon, HS; Park, BS; Park, Chul Soon; Choi, SS; Pyun, KE, ETRI JOURNAL, v.18, no.3, pp.171 - 179, 1996-10 |
| Room temperature photoluminescence studies of delta-doped pseudomorphic high electron mobility transistor AlGaAs/InGaAs/GaAs structures Lu, W; Lee, JH; Yoon, HS; Park, Chul Soon; Pyun, KE; Lee, HG; Suh, KS; et al, SOLID STATE COMMUNICATIONS, v.99, no.10, pp.713 - 716, 1996-09 |
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