Browse "School of Electrical Engineering(전기및전자공학부)" by Author Xu, Z
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| A study of quasi-breakdown mechanism in ultra thin gate oxide under various types of stress Cho, Byung Jin; Guan, H; Xu, Z; Li, MF; He, YD, Materials Research Society (MRS) 1999 Fall Meeting Symp., pp.0 - 0, 1999-11-29 |
| A study of quasi-breakdown mechanism in ultra-thin gate oxide by using DCIV technique Cho, Byung Jin; Guan, H; Li, MF; He, YD; Xu, Z; Dong, Z, the 7th International Symp. on the Physical and Failure Analysis of Integrated Circuits, pp.81 - 81, 1999-07-05 |
| Annealing behavior of gate oxide leakage current after quasi-breakdown Xu, Z; Cho, Byung Jin; Li, MF, MICROELECTRONICS RELIABILITY, v.40, pp.1341 - 1346, 2000-10 |
| Bipolar current stressing and electrical recovery of quasi-breakdown in thin gate oxides Cho, Byung Jin; Loh, WY; Li, MF; Xu, Z, 8th International Symp. on the Physical and Failure Analysis of Integrated Circuits (IPFA), pp.59 - 59, 2001-07-09 |
| Effect of substrate hot-carrier injection on quasibreakdown of ultrathin gate oxide Cho, Byung Jin; Xu, Z; Guan, H; Li, MF, JOURNAL OF APPLIED PHYSICS, v.86, no.11, pp.6590 - 6592, 1999-12 |
| Experimental evidence of interface-controlled mechanism of quasi-breakdown in ultrathin gate oxide Guan, H; Cho, Byung Jin; Li, MF; Xu, Z; He, YD; Dong, Z, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.48, no.5, pp.1010 - 1013, 2001-05 |
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