Showing results 1 to 5 of 5
EXCESS CURRENT IN N+GAAS-ALXGA1-XAS-NGAAS HETEROJUNCTIONS LU, SS; Lee, Kwyro; LEE, KH; NATHAN, MI; HEIBLUM, M; WRIGHT, SL, SURFACE SCIENCE, v.228, no.1-3, pp.430 - 432, 1990-04 |
RESONANT INDIRECT FOWLER-NORDHEIM TUNNELING IN AL0.8GA0.2AS BARRIER LU, SS; Lee, Kwyro; NATHAN, MI; WRIGHT, SL, APPLIED PHYSICS LETTERS, v.58, no.3, pp.266 - 268, 1991-01 |
TEMPERATURE-DEPENDENCE OF MINORITY-CARRIER MOBILITY AND RECOMBINATION TIME IN P-TYPE GAAS BEYZAVI, K; Lee, Kwyro; KIM, DM; NATHAN, MI; WRENNER, K; WRIGHT, SL, APPLIED PHYSICS LETTERS, v.58, no.12, pp.1268 - 1270, 1991-03 |
THEORETICAL AND EXPERIMENTAL-STUDY OF THE LONGITUDINAL UNIAXIAL-STRESS DEPENDENCE OF I-V-CHARACTERISTICS IN GAAS-ALXGA1-XAS-GAAS HETEROJUNCTION BARRIERS LU, SS; Lee, Kwyro; LEE, KH; NATHAN, MI; HEIBLUM, M; WRIGHT, SL, JOURNAL OF APPLIED PHYSICS, v.67, no.10, pp.6360 - 6367, 1990-05 |
UNIAXIAL-STRESS DEPENDENCE OF CURRENT-VOLTAGE CHARACTERISTICS IN GAAS-ALXGA1-XAS-GAAS HETEROJUNCTION BARRIERS LU, SS; Lee, Kwyro; NATHAN, MI; HEIBLUM, M; WRIGHT, SL, APPLIED PHYSICS LETTERS, v.55, no.13, pp.1336 - 1338, 1989-09 |
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