Showing results 1 to 7 of 7
A Comprehensive Study of Hot-Carrier Behaviors with Consideration of Non-Local, Series Resistance, Quantum, and Temperature Effects in Multi-Gate FinFETs Han, Jin-Woo; Park, Donggun; Choi, Yang-Kyu, International Conference on Solid State Device and Materials, pp.458 - 459, Japan society of applied physics, 2007-09 |
A Comprehensive Study of Hot-Carrier Effects in Body-Tied FinFETs Choi, Yang-Kyu; Han, Jin-Woo; Lee, Choong-Ho; Park, Donggun, 2005 International Conference on Solid State Devices and Materials Proceedings, pp.876 - 877, 2005-09 |
Body Effects in Tri-Gate Bulk FinFETs for DTMOS Choi, Yang-Kyu; Han, Jin-Woo; Lee, Choong-Ho; Park, Donggun, IEEE Nanotechnology Materials and Devices Conference, 123, 2006-10 |
Body thickness dependence of impact ionization in a multiple-gate FinFET Han, Jin-Woo; Lee, Jiye; Park, Donggun; Choi, Yang-Kyu, IEEE ELECTRON DEVICE LETTERS, v.28, no.7, pp.625 - 627, 2007-07 |
Extraction Method of Source and Drain to Gate Overlap Length in Thin-Body FinFETs Choi, Yang-Kyu; Han, Jin-Woo; Lee, Choong-Ho; Park, Donggun, The 14th Korean Conference on Semiconductors (KCS), pp.619 - 620, 2007-02 |
Guideline for Worst Hot Carrier Stress Condition Using Substrate Current in a Body-Tied FinFET Choi, Yang-Kyu; Han, Jin-Woo; Lee, Hyunjin; Lee, Choong-Ho; Park, Donggun, The 12th Korean Conference on Semiconductors (KCS), pp.99 - 100, 2005-02 |
Quasi-3-D velocity saturation model for multiple-gate MOSFETs Han, Jin-Woo; Lee, Choong-Ho; Park, Donggun; Choi, Yang-Kyu, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.54, no.5, pp.1165 - 1170, 2007-05 |
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