Showing results 1 to 4 of 4
Analysis of 1/f noise in LWIR HgCdTe photodiodes Bae, SH; Lee, SJ; Kim, YH; Lee, Hee Chul; Kim, Choong Ki, JOURNAL OF ELECTRONIC MATERIALS, v.29, no.6, pp.877 - 882, 2000-06 |
Dark-current suppression in metal-germanium-metal photodetectors through dopant-segregation in NiGe - Schottky barrier Zang, H.; Lee, S. J.; Loh, W. Y.; Wang, J.; Chua, K. T.; Yu, M. B.; Cho, Byung Jin; et al, IEEE ELECTRON DEVICE LETTERS, v.29, no.2, pp.161 - 164, 2008-02 |
Reduction of dark current in an n-type In0.3Ga0.7As/GaAs quantum well infrared photodetector by using a camel diode structure Park, Jinsung; Jo, Seong-June; Hong, Songcheol; Song, Song-in, SOLID-STATE ELECTRONICS, v.46, no.5, pp.651 - 654, 2002-05 |
SWIR 대역 이미징 시스템 응용을 위한 낮은 암전류 특성을 지니는 InGaAs/InP Mesa-type PIN 포토다이오드 개발 = Development of InGaAs/InP Mesa-type PIN photodiodes with low dark current characteristics for SWIR imaging applicationslink 백승민; Baek, Seung Min; et al, 한국과학기술원, 2015 |
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