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EFFECTS OF CARRIER-VELOCITY SATURATION ON THE CHARACTERISTICS OF SHORT CHANNEL MOSFETS WITH LIGHTLY DOPED DRAINS LEE, MB; LEE, JI; KANG, KN; YOON, KS; Hong, Songcheol; LIM, KY, PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, v.131, no.1, pp.77 - 80, 1992-05 |
Extremely scaled silicon nano-CMOS devices Chang, LL; Choi, Yang-Kyu; Ha, DW; Ranade, P; Xiong, SY; Bokor, J; Hu, CM; et al, PROCEEDINGS OF THE IEEE, v.91, no.11, pp.1860 - 1873, 2003-11 |
Heterogeneous 3-D Sequential CFETs With Ge (110) Nanosheet p-FETs on Si (100) Bulk n-FETs Kim, Seong Kwang; Lim, Hyeong-Rak; Jeong, Jaejoong; Lee, Seung Woo; Jeong, Ho Jin; Park, Juhyuk; Kim, Joon Pyo; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.71, no.1, pp.393 - 399, 2024-01 |
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