Showing results 5 to 6 of 6
Mechanism of Date Retention Improvement by High Temperature Annealing of Al(2)O(3) Blocking Layer in Flash Memory Device Park, Jong-Kyung; Park, Young-Min; Lee, Seok-Hee; Lim, Sung-Kyu; Oh, Jae-Sub; Joo, Moon-Sig; Hong, Kwon; et al, JAPANESE JOURNAL OF APPLIED PHYSICS, v.50, no.4, 2011-04 |
Structural and compositional dependence of gadolinium-aluminum oxide for the application of charge-trap-type nonvolatile memory devices Park, Young-Min; Park, Jong-Kyung; Song, Myeong-Ho; Lim, Sung-Kyu; Oh, Jae-Sub; Joo, Moon-Sig; Hong, Kwon; et al, APPLIED PHYSICS LETTERS, v.96, no.5, 2010-02 |
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