Browse "School of Electrical Engineering(전기및전자공학부)" by Author Park, Young-Min
Showing results 3 to 6 of 6
| Improvement of memory performance by high temperature annealing of the Al2O3 blocking layer in a charge-trap type flash memory device Park, Jong-Kyung; Park, Young-Min; Lim, Sung-Kyu; Oh, Jae-Sub; Joo, Moon-Sig; Hong, Kwon; Cho, Byung-Jin, APPLIED PHYSICS LETTERS, v.96, no.22, 2010-05 |
| Lanthanum-Oxide-Doped Nitride Charge-Trap Layer for a TANOS Memory Device Park, Jong-Kyung; Park, Young-Min; Lee, Seok-Hee; Iim, Sung-Kyu; Oh, Jae-Sub; Joo, Moon-Sig; Hong, Kwon; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.58, no.10, pp.3314 - 3320, 2011-10 |
| Mechanism of Date Retention Improvement by High Temperature Annealing of Al(2)O(3) Blocking Layer in Flash Memory Device Park, Jong-Kyung; Park, Young-Min; Lee, Seok-Hee; Lim, Sung-Kyu; Oh, Jae-Sub; Joo, Moon-Sig; Hong, Kwon; et al, JAPANESE JOURNAL OF APPLIED PHYSICS, v.50, no.4, 2011-04 |
| Structural and compositional dependence of gadolinium-aluminum oxide for the application of charge-trap-type nonvolatile memory devices Park, Young-Min; Park, Jong-Kyung; Song, Myeong-Ho; Lim, Sung-Kyu; Oh, Jae-Sub; Joo, Moon-Sig; Hong, Kwon; et al, APPLIED PHYSICS LETTERS, v.96, no.5, 2010-02 |
Discover
Open Access
- 573 OA Article
Date issued
- 4,909 2020 - 2024
- 18,937 2010 - 2019
- 15,019 2000 - 2009
- 7,644 1990 - 1999
- 2,391 1980 - 1989