Showing results 2 to 7 of 7
Fabrication of nanoscale MOSFET with high injection velocity and investigation on their characteristic = 높은 소스 주입 속도를 갖는 나노 스케일 소자의 제작 및 특성 연구link Jeon, Chang-Hoon; 전창훈; et al, 한국과학기술원, 2016 |
Investigation of Self-Heating Effects in Gate-All-Around MOSFETs With Vertically Stacked Multiple Silicon Nanowire Channels Park, Jun-Young; Lee, Byung-Hyun; Chang, Ki Soo; Kim, Dong Uk; Jeong, Chanbae; Kim, Choong-Ki; Bae, Hagyoul; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.64, no.11, pp.4393 - 4399, 2017-11 |
Nonvolatile Memory by All-Around-Gate Junctionless Transistor Composed of Silicon Nanowire on Bulk Substrate Choi, Sung-Jin; Moon, Dong-Il; Kim, Sung-Ho; Ahn, Jae-Hyuk; Lee, Jin-Seong; Kim, Jee-Yeon; Choi, Yang-Kyu, IEEE ELECTRON DEVICE LETTERS, v.32, no.5, pp.602 - 604, 2011-05 |
Sensitivity of Threshold Voltage to Nanowire Width Variation in Junctionless Transistors Choi, Sung-Jin; Moon, Dong-Il; Kim, Sung-Ho; Duarte, Juan P.; Choi, Yang-Kyu, IEEE ELECTRON DEVICE LETTERS, v.32, no.2, pp.125 - 127, 2011-02 |
Silicon Nanowire All-Around Gate MOSFETs Built on a Bulk Substrate by All Plasma-Etching Routes Moon, Dong-Il; Choi, Sung-Jin; Kim, Chung-Jin; Kim, Jee-Yeon; Lee, Jin-Seong; Oh, Jae-Sub; Lee, Gi-Sung; et al, IEEE ELECTRON DEVICE LETTERS, v.32, no.4, pp.452 - 454, 2011-04 |
Vertically Integrated Multiple Nanowire Field Effect Transistor Lee, Byung Hyun; Kang, Min Ho; Ahn, Dae Chul; Park, Jun Young; Bang, Tewook; Jeon, Seung Bae; Hur, Jae; et al, NANO LETTERS, v.15, no.12, pp.8056 - 8061, 2015-12 |
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