Showing results 1 to 3 of 3
Impact of Inter layer Processing Conditions on the Performance of GaN Light-Emitting Diode with Specific NiOx/Graphene Electrode Chandramohan, S.; Kang, Ji Hye; Ryu, Beo Deul; Yang, Jong Han; Kim, Seongjun; Kim, Hynsoo; Park, Jong Bae; et al, ACS APPLIED MATERIALS & INTERFACES, v.5, no.3, pp.958 - 964, 2013-02 |
InP/InGaAs heterojunction bipolar transistors with low-resistance contact on heavily doped InP emitter layer Kim, M; Kim, CY; Kwon, Young Se, APPLIED PHYSICS LETTERS, v.84, no.15, pp.2934 - 2936, 2004-04 |
Nanoscale contacts between semiconducting nanowires and metallic graphenes Kim, Seongmin; Janes, David B.; Choi, Sung-Yool; Ju, Sanghyun, APPLIED PHYSICS LETTERS, v.101, no.6, 2012-08 |
Discover