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InP/InGaAs heterojunction bipolar transistors with low-resistance contact on heavily doped InP emitter layer Kim, M; Kim, CY; Kwon, Young Se, APPLIED PHYSICS LETTERS, v.84, no.15, pp.2934 - 2936, 2004-04 |
NUMERICAL MODELING OF ABRUPT HETEROJUNCTIONS USING A THERMIONIC-FIELD EMISSION BOUNDARY-CONDITION Yang, Kyounghoon; EAST, JR; HADDAD, GI, SOLID-STATE ELECTRONICS, v.36, no.3, pp.321 - 330, 1993-03 |
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