| 18401 | First principles based NEGF simulations of low dimensional semiconductor devices Shin, Mincheol, SISPAD 2017 Workshop, SISPAD 2017 Workshop, 2017-09-06 |
| 18402 | First Principles Based NEGF Simulations of Si Nanowire FETs Shin, Mincheol; Jeong, Woo Jin; Seo, Junbeom, International Conference on Simulation of Semiconductor Processes and Devices 2016, SISPAD, 2016-09-07 |
| 18403 | First Results in Terrain Mapping for a Roving Planetary Explorer Kweon, In-So; Krotkov, E; Hebert, M; Kanade, T, NASA Conference on Space Telerobotics, 1989-01 |
| 18404 | First- and Second-order Crossover of the Escape Rate for the Biaxial Spin Model with the Field Applied along the Hard Axis at Resonance Kang, Doo Hyung; Shin, Mincheol; Kim, Gwang-Hee, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.59, no.1, pp.93 - 97, 2011-07 |
| 18405 | First-class access for developing-world environments Pai, V.S.; Badam, A.; Ihm, S.; Park, KyoungSoo, 5th International Conference on Future Internet Technologies, CFI'10, pp.30 - 34, ACM, 2010-06-16 |
| 18406 | First-order estimation on the constraints of radiative recombination zone distribution in organic-inorganic halide perovskite light emitting diodes Park, Jaehyeok; LEE, JAEHO; Yoo, Seunghyup, The 18th International Meeting on Information Display (IMID 2018), KIDS, 2018-08-29 |
| 18407 | First-Order Rate-Based Flow Control with Dynamic Queue Threshold for High-Speed Wide-Area ATM Networks Chong, Song; Nagarajan, R; Wang, Y.T., SPIE Conference on Video, Voice and Data Communications, pp.259 - 270, 1997 |
| 18408 | First-order reversal curve diagrams for characterizing ferroelectricity of Hf0.5Zr0.5O2 films grown at different rates Goh, Youngin; Jeon, Sanghun, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.36, no.5, 2018-09 |
| 18409 | First-Pass Observation using TRFGE MR Imaging Mun, CW; Lim, TH; Cho, ZH; Ro, YongMan, SMR, pp.0 - 0, 1995-01-01 |
| 18410 | First-principles based non-equilibrium Green's function simulations of low-power semiconductor devices 신민철, 2017 한국물리학회 추계 학술논문 발표회, 한국물리학회, 2017-10-26 |
| 18411 | First-principles based quantum transport simulations of nanoscale field effect transistors Shin, Mincheol; Jung, Hyo Eun; Jung, Sungwoo, 63rd IEEE Annual International Electron Devices Meeting (IEDM), International Electron Devices Meeting, 2017-12-06 |
| 18412 | First-principles based simulations of nanoscale field effect transistors having hundreds of thousands atoms 신민철, 2018 한국슈퍼컴퓨팅 컨피런스, 한국과학기술정보연구원, 2018-10-04 |
| 18413 | First-principles based simulations of Si ultra-thin-body FETs with SiO2 gate dielectric Shin, Mincheol; Jung, Hyo Eun, IWCN 2017, IWCN 2017, 2017-06-07 |
| 18414 | First-principles calculation of electric enthalpy at voltage-applied electrochemical interfaces = 전압이 인가된 전기화학 계면에서의 전기 엔탈피의 제1원리적 계산link Lee, Juho; Kim, Yong-Hoon; et al, 한국과학기술원, 2020 |
| 18415 | First-Principles Calculation of Schottky-Barrier Height of the Nanostructured Silicide-Si Junction 이재현; 김성철; Shin, Mincheol, 제 12회 고등과학원 전자구조계산학회, 고등과학원, 2016-06-16 |
| 18416 | First-principles calculation of the non-equilibrium quasi-Fermi level in WSe2 p-n junction Kim, Taehyeong; Lee, Juho; Lee, Jun Seong; Kim, Yong-Hoon, The International Workshop on Computational Nanotechnology 2021, Korea Advanced Institute of Science and Technology (KAIST), 2021-05-13 |
| 18417 | First-principles calculation of the non-equilibrium quasi-Fermi levels in defective WSe2 p-n junctions Tae-Hyung Kim; Kim, Yong-Hoon; Hyeonwoo Yeo, APS March Meeting 2022, American physical society, 2022-03-18 |
| 18418 | First-principles calculation of the non-equilibrium quasi-Fermi levels in defective WSe2 p-n junctions Kim, Tae-Hyung; Kim, Yong-Hoon, PSI-K 2022 CONFERENCE, THE PSI-K COMMUNITY, 2022-08-24 |
| 18419 | First-principles calculation of the non-equilibrium quasi-Fermi levels in WSe2 p-n junctions 김태형; 김용훈; 이주호, 2021 한국물리학회 가을학술대회, 한국물리학회, 2021-10-22 |
| 18420 | First-principles calculations and automation for electrochemical device applications based on 2D materials = 2차원 재료의 전기화학 소자 응용을 위한 제일원리 계산 및 자동화 연구link Noh, Min Jong; Kim, Yong-Hoon; et al, 한국과학기술원, 2021 |
