Browse "School of Electrical Engineering(전기및전자공학부)" by Title
Showing results 18381 to 18400 of 51062
| FIRMWARE-BASIERTES OPTISCHES SPEKTROSKOPIESYSTEM Bae, Hyeon-Min; Kim, Jae Myoung; Choi, Jong Kwan; Choi, Min Gyu; Hwang, Gun Pil |
| FIRMWARE-BASIERTES OPTISCHES SPEKTROSKOPIESYSTEM Bae, Hyeon-Min; Kim, Jae Myoung; Choi, Jong Kwan; Choi, Min Gyu; Hwang, Gun Pil |
| First Demonstration of a Logic-process Compatible Junctionless Ferroelectric FinFET Synapse for Neuromorphic Applications Seo, Myungsoo; Kang, Min Ho; Jeon, Seung-Bae; Bae, Hagyoul; Hur, Jae; Jang, Byung Chul; Yun, Seokjung; et al, IEEE ELECTRON DEVICE LETTERS, v.39, no.9, pp.1445 - 1448, 2018-09 |
| First Demonstration of a Wrap-Gated CNT-FET with Vertically-Suspended Channels Lee, Dong-Il; Lee, Byung-Hyun; Yoon, Jin-Su; Choi, Bong-Sik; Park, Jun-Young; Ahn, Dae-Chul; Kim, Choong-Ki; et al, International Electron Devices Meeting (IEDM), International Electron Devices Meeting (IEDM), 2016-12-05 |
| First Demonstration of Junctionless Accumulation-Mode Bulk FinFETs With Robust Junction Isolation Kim, Tae Kyun; Kim, Dong Hyun; Yoon, Young Gwang; Moon, Jung Min; Hwang, Byeong Woon; Moon, Dong-Il; Lee, Gi Seong; et al, IEEE ELECTRON DEVICE LETTERS, v.34, no.12, pp.1479 - 1481, 2013-12 |
| First Demonstration of Ultra-Thin SiGe-Channel Junctionless Accumulation-Mode (JAM) Bulk FinFETs on Si Substrate with PN Junction-Isolation Scheme Kim, Dong-Hyun; Kim, Tae Kyun; Yoon, Young Gwang; Hwang, Byeong Woon; Choi, Yang-Kyu; Cho, Byung Jin; Lee, Seok-Hee, IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, v.2, no.5, pp.123 - 127, 2014-09 |
| First Experimental Demonstration of Junctionless SiGe PMOS FinFETs on n-type Bulk-Si 김태균; 윤영광; 문정민; 문동일; 이기성; 이동욱; 황철해; et al, 제20회 한국반도체학술대회, 동부하이텍, 한국반도체산업협회, 한국반도체연구조합, 2013-02-05 |
| First Lateral Contact Probing of 55-μm Fine Pitch Micro-Bumps Kim, Chang-Keun; Yoon, Yong Hoon; Kwon, Donguk; Kim, Seunghwan; Yoon, Gun-Wook; Rhee, Min Woo; Yun, Jinyeong; et al, JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, v.27, no.6, pp.1114 - 1123, 2018-12 |
| First principles based NEGF simulations of low dimensional semiconductor devices Shin, Mincheol, SISPAD 2017 Workshop, SISPAD 2017 Workshop, 2017-09-06 |
| First Principles Based NEGF Simulations of Si Nanowire FETs Shin, Mincheol; Jeong, Woo Jin; Seo, Junbeom, International Conference on Simulation of Semiconductor Processes and Devices 2016, SISPAD, 2016-09-07 |
| First Results in Terrain Mapping for a Roving Planetary Explorer Kweon, In-So; Krotkov, E; Hebert, M; Kanade, T, NASA Conference on Space Telerobotics, 1989-01 |
| First- and Second-order Crossover of the Escape Rate for the Biaxial Spin Model with the Field Applied along the Hard Axis at Resonance Kang, Doo Hyung; Shin, Mincheol; Kim, Gwang-Hee, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.59, no.1, pp.93 - 97, 2011-07 |
| First-class access for developing-world environments Pai, V.S.; Badam, A.; Ihm, S.; Park, KyoungSoo, 5th International Conference on Future Internet Technologies, CFI'10, pp.30 - 34, ACM, 2010-06-16 |
| First-order estimation on the constraints of radiative recombination zone distribution in organic-inorganic halide perovskite light emitting diodes Park, Jaehyeok; LEE, JAEHO; Yoo, Seunghyup, The 18th International Meeting on Information Display (IMID 2018), KIDS, 2018-08-29 |
| First-Order Rate-Based Flow Control with Dynamic Queue Threshold for High-Speed Wide-Area ATM Networks Chong, Song; Nagarajan, R; Wang, Y.T., SPIE Conference on Video, Voice and Data Communications, pp.259 - 270, 1997 |
| First-order reversal curve diagrams for characterizing ferroelectricity of Hf0.5Zr0.5O2 films grown at different rates Goh, Youngin; Jeon, Sanghun, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.36, no.5, 2018-09 |
| First-Pass Observation using TRFGE MR Imaging Mun, CW; Lim, TH; Cho, ZH; Ro, YongMan, SMR, pp.0 - 0, 1995-01-01 |
| First-principles based non-equilibrium Green's function simulations of low-power semiconductor devices 신민철, 2017 한국물리학회 추계 학술논문 발표회, 한국물리학회, 2017-10-26 |
| First-principles based quantum transport simulations of nanoscale field effect transistors Shin, Mincheol; Jung, Hyo Eun; Jung, Sungwoo, 63rd IEEE Annual International Electron Devices Meeting (IEDM), International Electron Devices Meeting, 2017-12-06 |
| First-principles based simulations of nanoscale field effect transistors having hundreds of thousands atoms 신민철, 2018 한국슈퍼컴퓨팅 컨피런스, 한국과학기술정보연구원, 2018-10-04 |
Discover
Open Access
- 573 OA Article
Date issued
- 4,882 2020 - 2024
- 18,937 2010 - 2019
- 15,019 2000 - 2009
- 7,644 1990 - 1999
- 2,391 1980 - 1989