| 18621 | First-principles based simulations of Si ultra-thin-body FETs with SiO2 gate dielectric Shin, Mincheol; Jung, Hyo Eun, IWCN 2017, IWCN 2017, 2017-06-07 |
| 18622 | First-principles calculation of electric enthalpy at voltage-applied electrochemical interfaces = 전압이 인가된 전기화학 계면에서의 전기 엔탈피의 제1원리적 계산link Lee, Juho; Kim, Yong-Hoon; et al, 한국과학기술원, 2020 |
| 18623 | First-Principles Calculation of Schottky-Barrier Height of the Nanostructured Silicide-Si Junction 이재현; 김성철; Shin, Mincheol, 제 12회 고등과학원 전자구조계산학회, 고등과학원, 2016-06-16 |
| 18624 | First-principles calculation of the non-equilibrium quasi-Fermi level in WSe2 p-n junction Kim, Taehyeong; Lee, Juho; Lee, Jun Seong; Kim, Yong-Hoon, The International Workshop on Computational Nanotechnology 2021, Korea Advanced Institute of Science and Technology (KAIST), 2021-05-13 |
| 18625 | First-principles calculation of the non-equilibrium quasi-Fermi levels in defective WSe2 p-n junctions Tae-Hyung Kim; Kim, Yong-Hoon; Hyeonwoo Yeo, APS March Meeting 2022, American physical society, 2022-03-18 |
| 18626 | First-principles calculation of the non-equilibrium quasi-Fermi levels in defective WSe2 p-n junctions Kim, Tae-Hyung; Kim, Yong-Hoon, PSI-K 2022 CONFERENCE, THE PSI-K COMMUNITY, 2022-08-24 |
| 18627 | First-principles calculation of the non-equilibrium quasi-Fermi levels in WSe2 p-n junctions 김태형; 김용훈; 이주호, 2021 한국물리학회 가을학술대회, 한국물리학회, 2021-10-22 |
| 18628 | First-principles calculations and automation for electrochemical device applications based on 2D materials = 2차원 재료의 전기화학 소자 응용을 위한 제일원리 계산 및 자동화 연구link Noh, Min Jong; Kim, Yong-Hoon; et al, 한국과학기술원, 2021 |
| 18629 | First-principles semiconductor interface modeling for atomistic device simulations = 제일 원리 기반의 산화 절연막 계면 특성 분석 및 원자 수준 소자의 수송 특성 연구link Jung, Hyo-Eun; Shin, Min Cheol; et al, 한국과학기술원, 2018 |
| 18630 | First-Principles Studies of the Electronic and Dielectric Properties of Si/SiO2/HfO2 Interfaces Park, Yongjin; Kong, Ki-jeong; Chang, Hyunju; Shin, Mincheol, JAPANESE JOURNAL OF APPLIED PHYSICS, v.52, no.4, pp.041803, 2013-04 |
| 18631 | First-principles Study of CuInP2S6 Based Van der Walls Heterostructure at Non-equilibrium State 송유민; 이주호; 김용훈, 한국물리학회 2021년 봄학술대회, 한국물리학회, 2021-04-22 |
| 18632 | First-principles Study of CuInP2S6 Based Van der Walls Heterostructure at Non-equilibrium State Song, Yumin; Lee, Juho; Kim, Yong-Hoon, APS March Meeting 2021, American Physical Society, 2021-03-17 |
| 18633 | First-principles Study of CuInP2S6 Based Van der Walls Heterostructure at Non-equilibrium State 송유민; 이주호; 김용훈, 제 28회 한국반도체학술대회, 한국물리학회 반도체분과회, 2021-01-27 |
| 18634 | First-principles study of electron and spin transport in carbon chain based nanodevices = 탄소선 기반 나노 소자의 전자 및 스핀 수송 특성의 제 1원리 연구link KIM, Tae Hyung; Kim, Yong Hoon; et al, 한국과학기술원, 2018 |
| 18635 | First-principles study of electronic and optical properties of II-VI semiconductor nanoplatelets = II-VI 족 반도체 나노판의 전자 및 광학 특성의 제 1 원리 연구link Byeon, SeongJae; Kim, Yong-Hoon; et al, 한국과학기술원, 2019 |
| 18636 | First-principles study of fate field effect in vertical van der Waals heterostructures Lee, Juho; Kim, Taehyeong; Lee, Ryong Gyu; Kim, Yong-Hoon, The International Workshop on Computational Nanotechnology 2021, Korea Advanced Institute of Science and Technology, 2021-05-31 |
| 18637 | First-principles study of interfacial water structures on electrified gold electrodes 이주호; 김용훈, 한국물리학회 2021년 봄학술대회, 한국물리학회, 2021-04-22 |
| 18638 | First-principles Study of Lateral WSe2 p-n Junction Kim, Tae Hyung; Lee, Juho; Lee, Jun Seong; Kim, Yong-Hoon, APS March Meeting 2021, American Physical Society, 2021-03-16 |
| 18639 | First-principles Study of Lateral WSe2 p-n Junction 김태형; 이주호; 이준성; 김용훈, 제 28회 한국반도체학술대회, 한국물리학회 반도체분과회, 2021-01-28 |
| 18640 | First-principles Study of the Atomistic Mechanism of Ferrocene-based Molecular Rectifier Kim, Tae Hyung; Kim, Yong-Hoon; Lee, Juho, International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2023, The Japan Society of Applied Physics, The IEEE Electron Devices Society, 2023-08-26 |
