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Reduction of dark current in an n-type In0.3Ga0.7As/GaAs quantum well infrared photodetector by using a camel diode structure Park, Jinsung; Jo, Seong-June; Hong, Songcheol; Song, Song-in, SOLID-STATE ELECTRONICS, v.46, no.5, pp.651 - 654, 2002-05 |
SWIR 대역 이미징 시스템 응용을 위한 낮은 암전류 특성을 지니는 InGaAs/InP Mesa-type PIN 포토다이오드 개발 = Development of InGaAs/InP Mesa-type PIN photodiodes with low dark current characteristics for SWIR imaging applicationslink 백승민; Baek, Seung Min; et al, 한국과학기술원, 2015 |
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