Browse "School of Electrical Engineering(전기및전자공학부)" by Title
Showing results 31701 to 31720 of 51586
| Quantum key distribution protocol design based on quantum information theory = 양자 정보 이론 기반의 양자 암호 키 분배 프로토콜 디자인 연구link Lim, Kyongchun; Rhee, June-Koo; et al, 한국과학기술원, 2019 |
| Quantum Maximum Likelihood Decoding for Linear Block Codes Jung, Hyunwoo; Kang, Jeonghwan; Ha, Jeongseok, 11th International Conference on Information and Communication Technology Convergence (ICTC) - Data, Network, and AI in the age of Untact (ICTC), pp.227 - 232, IEEE, 2020-10 |
| Quantum mechanical calculation of hole tunneling gate leakage current in nanoscale pMOSFETs = P형 모스펫에서의 홀 터널링에 의한 게이트 누설전류의 양자역학적 시뮬레이션link Park, Ki-Hoon; 박기훈; et al, 한국과학기술원, 2013 |
| Quantum mechanical simulation of charge distribution in Schottky barrier MOSFETs Shin, Mincheol; Jang, MY; Lee, S, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.45, pp.S547 - S550, 2004-12 |
| Quantum mechanical simulation of hole transport in p-type Si nanowire schottky barrier MOSFETs = P형 실리콘 나노와이어 쇼트키 배리어 트랜지스터에서의 양자 수송 시뮬레이션link Choi, Won-Chul; 최원철; et al, 한국과학기술원, 2011 |
| Quantum mechanical simulation of hole transport in p-type Si nanowire schottky barrier MOSFETs = P형 실리콘 나노와이어 쇼트키 배리어 트랜지스터에서의 양자 수송 시뮬레이션link Choi, Won-Chul; 최원철; et al, 한국과학기술원, 2011 |
| Quantum Mechanical Simulation of Hole Transport in p-Type Si Schottky Barrier MOSFETs Choi, Wonchul; Shin, Mincheol, JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.11, pp.5861 - 5864, 2011-07 |
| Quantum mechical simulation of hole transport in p-type Si Schottky barrier MOSFETs 신민철, NANO KOREA, 대한금속재료학회, 2010-08 |
| Quantum network for detecting and activating entanglement KIM, JaeMin; Bae, Joonwoo, 19th International Conference on Quantum Physics and Logic, QPL 2022, University of Oxford, 2022-06-27 |
| Quantum search by measurement with prior information = 사전 정보를 이용한 측정 기반의 양자 탐색 알고리즘link Kim, Munsik; 김문식; et al, 한국과학기술원, 2023 |
| Quantum series resonant inverter for a DC motor drive Moon, GunWoo; Ko, Jung0 Ho; Choi, Hyun Chil; Cho, Kwan Yuhl; Youn, Myung Joong, TENCON '93. Proceedings. Computer, Communication, Control and Power Engineering.1993 IEEE Region 10 Conference, pp.563 - 567, IEEE, 1993-10-19 |
| Quantum simulation of coaxially gated CNTFETs by using an effective mass approach Ahn, C; Shin, Mincheol, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.50, no.6, pp.1887 - 1893, 2007-06 |
| Quantum simulation of device characteristics of silicon nanowire FETs Shin, Mincheol, IEEE TRANSACTIONS ON NANOTECHNOLOGY, v.6, no.2, pp.230 - 237, 2007-03 |
| Quantum simulation of hole transport in Si nanowire pMOSFETs 신민철, 한국반도체학술대회, 한국반도체학술대회, 2010-02 |
| Quantum Simulation of III-V Double Gate Schottky Barrier MOSFETs Jaehyun Lee; Yolum Lee; Howon Choi; Shin, Mincheol, 2013 International Workshop on Computational Electronics, IWCE, 2013-06-07 |
| Quantum simulation of nano-scale schottky barrier MOSFETs Shin, Mincheol; Jang, M.; Lee, S., 2004 4th IEEE Conference on Nanotechnology, pp.396 - 398, 2004-08-16 |
| Quantum Simulation of p-type Nanowire Schottky Barrier MOSFETs: Silicon versus Germanium Channel 이재현; Shin, Mincheol, 제20회 한국반도체학술대회, 한국반도체학술대회, 2013-02-06 |
| Quantum simulation of resonant tunneling in nanoscale tunnel transistors Shin, Mincheol; Jang, M; Lee, S, JOURNAL OF APPLIED PHYSICS, v.99, no.6, pp.65 - 70, 2006-03 |
| Quantum Simulation of Si, GaAs, GaSb, and Ge Channel Ultra-Thin-Body Double-gate Negative Capacitance FETs Lee, Jaehyun; Jeong, Woo-Jin; Kang, Doo Hyung; Shin, Mincheol, 2014 IEEE Silicon Nanoelectronics Workshop, IEEE, 2014-06-09 |
| Quantum Simulation of Ultra-thin-body Double-Gate Negative Capacitance FETs with Sub-60mV/decade Switching Behavior Lee, Jaehyun; Jeong, Woo-Jin; Kang, Doo Hyung; Shin, Mincheol, NANO KOREA 2014, NANO KOREA, 2014-07-03 |
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