DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Hyun Jung | ko |
dc.contributor.author | Park, Yeonjoon | ko |
dc.contributor.author | Bae, Hyung Bin | ko |
dc.contributor.author | Choi, Sang H. | ko |
dc.date.accessioned | 2015-06-03T06:26:15Z | - |
dc.date.available | 2015-06-03T06:26:15Z | - |
dc.date.created | 2015-05-26 | - |
dc.date.created | 2015-05-26 | - |
dc.date.issued | 2015 | - |
dc.identifier.citation | ADVANCES IN CONDENSED MATTER PHYSICS, v.785415 | - |
dc.identifier.issn | 1687-8108 | - |
dc.identifier.uri | http://hdl.handle.net/10203/198737 | - |
dc.description.abstract | High-quality strain-relaxed SiGe films with a low twin defect density, high electron mobility, and smooth surface are critical for device fabrication to achieve designed performance. The mobilities of SiGe can be a few times higher than those of silicon due to the content of high carrier mobilities of germanium (p-type Si: 430 cm(2)/V.s, p-type Ge: 2200 cm(2)/V.s, n-type Si: 1300 cm(2)/V.s, and n-type Ge: 3000 cm(2)/V.s at 10(16) per cm 3 doping density). Therefore, radio frequency devices which are made with rhombohedral SiGe on c-plane sapphire can potentially run a few times faster than RF devices on SOS wafers. NASA Langley has successfully grown highly ordered single crystal rhombohedral epitaxy using an atomic alignment of the [111] direction of cubic SiGe on top of the [0001] direction of the sapphire basal plane. Several samples of rhombohedrally grown SiGe on c-plane sapphire show high percentage of a single crystalline over 95% to 99.5%. The electron mobilities of the tested samples are between those of single crystals Si and Ge. The measured electron mobility of 95% single crystal SiGe was 1538 cm(2)/V.s which is between 350 cm(2)/V.s (Si) and 1550 cm(2)/V.s (Ge) at 6 x 10(17)/cm(3) doping concentration. | - |
dc.language | English | - |
dc.publisher | HINDAWI PUBLISHING CORPORATION | - |
dc.subject | METAL-OXIDE-SEMICONDUCTOR | - |
dc.subject | FIELD-EFFECT TRANSISTORS | - |
dc.subject | STRAINED SI | - |
dc.subject | SILICON | - |
dc.subject | GE | - |
dc.subject | DENSITY | - |
dc.subject | ALLOYS | - |
dc.subject | GROWTH | - |
dc.title | High-Electron-Mobility SiGe on Sapphire Substrate for Fast Chipsets | - |
dc.type | Article | - |
dc.identifier.wosid | 000353785100001 | - |
dc.identifier.scopusid | 2-s2.0-84929379504 | - |
dc.type.rims | ART | - |
dc.citation.volume | 785415 | - |
dc.citation.publicationname | ADVANCES IN CONDENSED MATTER PHYSICS | - |
dc.identifier.doi | 10.1155/2015/785415 | - |
dc.contributor.nonIdAuthor | Kim, Hyun Jung | - |
dc.contributor.nonIdAuthor | Park, Yeonjoon | - |
dc.contributor.nonIdAuthor | Choi, Sang H. | - |
dc.description.isOpenAccess | Y | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | METAL-OXIDE-SEMICONDUCTOR | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | STRAINED SI | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordPlus | GE | - |
dc.subject.keywordPlus | DENSITY | - |
dc.subject.keywordPlus | ALLOYS | - |
dc.subject.keywordPlus | GROWTH | - |
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