Design of pipelined cache DRAM for fast random-access고속 Random-access를 위한 pipelined cache DRAM의 설계

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In this thesis, a new DRAM core called Pipelined Cache DRAM (PCDRAM) is proposed. A multi-bank architecture and bank interleaving techniques made possible fast row operation (typically at 1/tRC). Contrary to other multi-bank approaches, PCDRAM has no penalty for random-access even in the case that all requests are issued to the identical bank. In other words, PCDRAM perfectly ensures the penalty-free operation. The penalty-free means that PCDRAM operates at fast row cycle, regardless of whether cache hit/miss occurs or not and of whether the successive requests are for the same bank or for the different banks. Because of invariant and fast row cycle operation, PCDRAM can offer SRAM-like interface to an external system like microprocessors, except for the need of periodic refresh operation. This is realized by two additional DRAM caches, innovative Micro Core Operation, and some circuit techniques. For low power DRAM core operation, a novel bit line control scheme, Single Bit line Writing (SBW) scheme, is also proposed. Using SBW, The power consumption can be reduced in the core by 22% compared with the conventional DRAM core.
Advisors
Yoo, Hoi-Junresearcher유회준
Description
한국과학기술원 : 전기및전자공학전공,
Publisher
한국과학기술원
Issue Date
2001
Identifier
166005/325007 / 000993030
Language
eng
Description

학위논문(석사) - 한국과학기술원 : 전기및전자공학전공, 2001.2, [ 68 p. ]

Keywords

DRAM; 디램

URI
http://hdl.handle.net/10203/196838
Link
http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=166005&flag=dissertation
Appears in Collection
EE-Theses_Master(석사논문)
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