DC Field | Value | Language |
---|---|---|
dc.contributor.author | Yu, JH | ko |
dc.contributor.author | Lee, HyuckMo | ko |
dc.contributor.author | Hayashi, M | ko |
dc.contributor.author | Oogane, M | ko |
dc.contributor.author | Daibou, T | ko |
dc.contributor.author | Nakamura, H | ko |
dc.contributor.author | Kubota, H | ko |
dc.contributor.author | Ando, Y | ko |
dc.contributor.author | Miyazaki, T | ko |
dc.date.accessioned | 2007-11-16T06:11:38Z | - |
dc.date.available | 2007-11-16T06:11:38Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2003-05 | - |
dc.identifier.citation | JOURNAL OF APPLIED PHYSICS, v.93, no.10, pp.8555 - 8557 | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.uri | http://hdl.handle.net/10203/1966 | - |
dc.description.abstract | Magnetic tunnel junctions (MTJs) were fabricated using an Al-O insulating layer prepared on an epitaxially grown Ni80Fe20 bottom electrode and on a polycrystalline Ni80Fe20 bottom electrode. Crystallographic orientations and surface morphology of the films were examined using x-ray diffraction and atomic force microscopy, respectively. The MTJ with an epitaxial bottom electrode showed a tunnel magnetoresistance (TMR) ratio of 51% after annealing at 250 degreesC. This value was about two times larger than that of the MTJ with a polycrystalline bottom electrode (27%). The applied bias voltage dependences of the TMR ratios were also much different. The V-half values of epitaxial and polycrystalline samples were about 750 and 400 mV, respectively. (C) 2003 American Institute of Physics. | - |
dc.description.sponsorship | This study was supported by Grants-in-Aid for Scientific Research from the Ministry of Education, Culture, Sports, Science and Technology, CREST of JST, the SRC, and the Mitsubishi Foundation. Support at KAIST was provided by the BK21 Project of the Ministry of Education, Korea. | en |
dc.language | English | - |
dc.language.iso | en_US | en |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | ALUMINUM | - |
dc.title | Magnetic tunnel junctions with high magnetoresistance and small bias voltage dependence using epitaxial NiFe(111) ferromagnetic bottom electrodes | - |
dc.type | Article | - |
dc.identifier.wosid | 000182822600301 | - |
dc.identifier.scopusid | 2-s2.0-0038047737 | - |
dc.type.rims | ART | - |
dc.citation.volume | 93 | - |
dc.citation.issue | 10 | - |
dc.citation.beginningpage | 8555 | - |
dc.citation.endingpage | 8557 | - |
dc.citation.publicationname | JOURNAL OF APPLIED PHYSICS | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Lee, HyuckMo | - |
dc.contributor.nonIdAuthor | Yu, JH | - |
dc.contributor.nonIdAuthor | Hayashi, M | - |
dc.contributor.nonIdAuthor | Oogane, M | - |
dc.contributor.nonIdAuthor | Daibou, T | - |
dc.contributor.nonIdAuthor | Nakamura, H | - |
dc.contributor.nonIdAuthor | Kubota, H | - |
dc.contributor.nonIdAuthor | Ando, Y | - |
dc.contributor.nonIdAuthor | Miyazaki, T | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | ALUMINUM | - |
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