Development of amorphous silicon solar cell fabricated at low temperature and its performance enhancement using tungsten oxide buffer layer저온 증착 비정질 실리콘 태양전지의 개발 및 산화 텅스텐 완충층을 이용한 특성 향상

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dc.contributor.advisorYoo, Seung-Hyup-
dc.contributor.advisor유승협-
dc.contributor.advisorLim, Koeng-Su-
dc.contributor.advisor임굉수-
dc.contributor.authorKang, Sang-Jung-
dc.contributor.author강상정-
dc.date.accessioned2015-04-23T06:12:28Z-
dc.date.available2015-04-23T06:12:28Z-
dc.date.issued2014-
dc.identifier.urihttp://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=568565&flag=dissertation-
dc.identifier.urihttp://hdl.handle.net/10203/196529-
dc.description학위논문(박사) - 한국과학기술원 : 전기및전자공학과, 2014.2, [ x,114 p. ]-
dc.description.abstractThis thesis focuses on amorphous silicon (a-Si) solar cell which is deposited at low temperature around 130°C to use cheap substrate such as polyimide, polyethylene terephthalate, polyethylene naphthalate and polycarbonate. Due to the low doping efficiency of low deposition temperature, a-Si solar cell which is depos-ited at low temperature shows low fill factor and low conversion efficiency. This thesis, also, focuses on per-formance improvement to achieve high conversion efficiency. In order to achieve this object, very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) system was introduced instead of PECVD and solar cell was fabricated by using that PECVD and VHF-PECVD. With VHF-PECVD system, the thinner plasma sheaths and the lower RF-voltage directly related to the sheath potential can be obtained. Due to this, higher electron densities and better SiH4 dissocia-tion in the bulk plasma, as well as increased radical and ion flux onto the growing surface, can be achieved. A consequence of all this is a net increase in the deposition rate and the film quality especially at low tempera-ture. Also, tungsten oxide (WOx) film was developed and solar cell was fabricated by using that film. Using the WOx film as a buffer layer at the interface of n-a-Si/ZnO is a new approach to make amorphous silicon based thin film solar cell because all these methods which improve the solar cell efficiency are concerning the front-side, that is, window-side structures. WOx buffer layer have advantages compared to conventional amorphous silicon (a-Si:H) solar cell which has no WOx buffer layer . Firstly, the optical band gap of the WOx film is 3.35 eV. This wide optical band gap property is very useful for not only a window layer of a-Si solar cells but also a buffer layer of a-Si solar cells. WOx films pro-vides high transparency, which leads to open the way of the window layer and buffer layer. Secondly, the resistance of the materials determines the series r...eng
dc.languageeng-
dc.publisher한국과학기술원-
dc.subjectlow temperature solar cell-
dc.subjectdefect density-
dc.subjectcontact resistance-
dc.subject텅스텐 옥사이드-
dc.subject비정질 실리콘 태양전지-
dc.subject낮은 온도에서 증착된 태양전지-
dc.subject결함 밀도-
dc.subject접촉 저항-
dc.subjecttungsten oxide-
dc.subjectamorphous silicon solar cell-
dc.titleDevelopment of amorphous silicon solar cell fabricated at low temperature and its performance enhancement using tungsten oxide buffer layer-
dc.title.alternative저온 증착 비정질 실리콘 태양전지의 개발 및 산화 텅스텐 완충층을 이용한 특성 향상-
dc.typeThesis(Ph.D)-
dc.identifier.CNRN568565/325007 -
dc.description.department한국과학기술원 : 전기및전자공학과, -
dc.identifier.uid020085001-
dc.contributor.localauthorYoo, Seung-Hyup-
dc.contributor.localauthor유승협-
dc.contributor.localauthorLim, Koeng-Su-
dc.contributor.localauthor임굉수-
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