Charge pump circuit for depletion-mode oxide TFTs

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dc.contributor.authorOh, M.Wko
dc.contributor.authorLeem, H. G.ko
dc.contributor.authorYoon, S. M.ko
dc.contributor.authorByun, C. W.ko
dc.contributor.authorPark, Sang-Hee Koko
dc.contributor.authorOh, H. S.ko
dc.contributor.authorPark, K. C.ko
dc.date.accessioned2015-04-15-
dc.date.available2015-04-15-
dc.date.created2014-04-16-
dc.date.created2014-04-16-
dc.date.issued2011-03-
dc.identifier.citationELECTRONICS LETTERS, v.47, no.6, pp.378 - 379-
dc.identifier.issn0013-5194-
dc.identifier.urihttp://hdl.handle.net/10203/195998-
dc.description.abstractA chrage pump circuit suitable for depletion-mode oxide thin-film transistors (TFTs) is presented. In this circuit, negative gate-to-source bias is applied to turn off the n-type oxide TFTs because they have negative threshold voltages (V(T)). For this operation, two different supply voltages are used, i.e. V(DD) and V(DD)/2. Spice simulation shows that the power efficiency is about 70% in generating V(DD) x 2 output voltage with 50 mA load current. The output voltages of the fabricated circuits are comparable to those of the simulation results.-
dc.languageEnglish-
dc.publisherINST ENGINEERING TECHNOLOGY-IET-
dc.titleCharge pump circuit for depletion-mode oxide TFTs-
dc.typeArticle-
dc.identifier.wosid000288892100016-
dc.identifier.scopusid2-s2.0-79957538300-
dc.type.rimsART-
dc.citation.volume47-
dc.citation.issue6-
dc.citation.beginningpage378-
dc.citation.endingpage379-
dc.citation.publicationnameELECTRONICS LETTERS-
dc.identifier.doi10.1049/el.2011.0022-
dc.contributor.localauthorPark, Sang-Hee Ko-
dc.contributor.nonIdAuthorOh, M.W-
dc.contributor.nonIdAuthorLeem, H. G.-
dc.contributor.nonIdAuthorYoon, S. M.-
dc.contributor.nonIdAuthorByun, C. W.-
dc.contributor.nonIdAuthorOh, H. S.-
dc.contributor.nonIdAuthorPark, K. C.-
dc.type.journalArticleArticle-
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