DC Field | Value | Language |
---|---|---|
dc.contributor.author | Son, Seokki | ko |
dc.contributor.author | Yu, Sunmoon | ko |
dc.contributor.author | Choi, Moonseok | ko |
dc.contributor.author | Kim, Dohyung | ko |
dc.contributor.author | Choi, C | ko |
dc.date.accessioned | 2015-04-08T05:10:36Z | - |
dc.date.available | 2015-04-08T05:10:36Z | - |
dc.date.created | 2015-03-03 | - |
dc.date.created | 2015-03-03 | - |
dc.date.issued | 2015-01 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, v.106, no.2 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10203/195625 | - |
dc.description.abstract | We deposited a metal oxide buffer layer before atomic layer deposition (ALD) of Al2O3 onto exfoliated molybdenum disulfide (MoS2) in order to accomplish enhanced integration. We demonstrate that even at a high temperature, functionalization of MoS2 by means of a metal oxide buffer layer can effectively provide nucleation sites for ALD precursors, enabling much better surface coverage of Al2O3. It is shown that using a metal oxide buffer layer not only allows high temperature ALD process, resulting in highly improved quality of Al2O3/MoS2 interface, but also leaves MoS2 intact. | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | HIGH-K DIELECTRICS | - |
dc.subject | DICHALCOGENIDE NANOSHEETS | - |
dc.subject | 2-DIMENSIONAL CRYSTALS | - |
dc.subject | HIGH-PERFORMANCE | - |
dc.subject | MULTILAYER MOS2 | - |
dc.subject | SURFACE-ENERGY | - |
dc.subject | MONOLAYER MOS2 | - |
dc.subject | TRANSISTORS | - |
dc.subject | DEPOSITION | - |
dc.subject | GRAPHENE | - |
dc.title | Improved high temperature integration of Al2O3 on MoS2 by using a metal oxide buffer layer | - |
dc.type | Article | - |
dc.identifier.wosid | 000348054700022 | - |
dc.identifier.scopusid | 2-s2.0-84923771240 | - |
dc.type.rims | ART | - |
dc.citation.volume | 106 | - |
dc.citation.issue | 2 | - |
dc.citation.publicationname | APPLIED PHYSICS LETTERS | - |
dc.identifier.doi | 10.1063/1.4905634 | - |
dc.contributor.localauthor | Yu, Sunmoon | - |
dc.contributor.nonIdAuthor | Son, Seokki | - |
dc.contributor.nonIdAuthor | Choi, Moonseok | - |
dc.contributor.nonIdAuthor | Kim, Dohyung | - |
dc.contributor.nonIdAuthor | Choi, C | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | HIGH-K DIELECTRICS | - |
dc.subject.keywordPlus | DICHALCOGENIDE NANOSHEETS | - |
dc.subject.keywordPlus | 2-DIMENSIONAL CRYSTALS | - |
dc.subject.keywordPlus | HIGH-PERFORMANCE | - |
dc.subject.keywordPlus | MULTILAYER MOS2 | - |
dc.subject.keywordPlus | SURFACE-ENERGY | - |
dc.subject.keywordPlus | MONOLAYER MOS2 | - |
dc.subject.keywordPlus | TRANSISTORS | - |
dc.subject.keywordPlus | DEPOSITION | - |
dc.subject.keywordPlus | GRAPHENE | - |
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