DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Chang Hwi | ko |
dc.contributor.author | Kim, Geun Myeong | ko |
dc.contributor.author | Oh, Young Jun | ko |
dc.contributor.author | Chang, Kee-Joo | ko |
dc.date.accessioned | 2015-04-06T05:29:06Z | - |
dc.date.available | 2015-04-06T05:29:06Z | - |
dc.date.created | 2014-11-24 | - |
dc.date.created | 2014-11-24 | - |
dc.date.issued | 2014-11 | - |
dc.identifier.citation | CURRENT APPLIED PHYSICS, v.14, no.11, pp.1557 - 1563 | - |
dc.identifier.issn | 1567-1739 | - |
dc.identifier.uri | http://hdl.handle.net/10203/194651 | - |
dc.description.abstract | We investigate the migration pathway and barrier for B diffusion at SiGe/SiO2 interface through first-principles density functional calculations. Similar to the diffusion mechanism reported for Si/SiO2 interface, a substitutional B, which initially forms a B-self-interstitial complex in SiGe, diffuses to the interface and then to the oxide in form of an interstitial B. At the defect-free interface, where bridging O atoms are inserted to remove interface dangling bonds, it is energetically more favorable for the interstitial B to intervene in the Ge-O bridge bond rather than the Si-O bridge bond at the interface. As a result of the B intervention, interface Ge atoms significantly enhance the stability of B-related defects in the interface region and thereby act as traps for B dopants. At the interface with the Ge-O bridge bond, the overall migration barrier for B diffusion from SiGe to SiO2 is estimated to be about 3.7 eV, much higher than the reported value of about 2.1 eV at Si/SiO2 interface. Our results provide a clue to understanding the experimental observation that B segregation toward the oxide is suppressed in SiGe/SiO2 interface. | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.subject | FINDING SADDLE-POINTS | - |
dc.subject | AB-INITIO | - |
dc.subject | SI-SIO2 INTERFACE | - |
dc.subject | SI/SIO2 INTERFACE | - |
dc.subject | DIFFUSION | - |
dc.subject | SILICON | - |
dc.subject | SIGE | - |
dc.subject | PERFORMANCE | - |
dc.subject | SI1-XGEX | - |
dc.title | Suppression of boron segregation by interface Ge atoms at SiGe/SiO2 interface | - |
dc.type | Article | - |
dc.identifier.wosid | 000343693200029 | - |
dc.identifier.scopusid | 2-s2.0-84907677223 | - |
dc.type.rims | ART | - |
dc.citation.volume | 14 | - |
dc.citation.issue | 11 | - |
dc.citation.beginningpage | 1557 | - |
dc.citation.endingpage | 1563 | - |
dc.citation.publicationname | CURRENT APPLIED PHYSICS | - |
dc.identifier.doi | 10.1016/j.cap.2014.08.027 | - |
dc.contributor.localauthor | Chang, Kee-Joo | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Diffusion | - |
dc.subject.keywordAuthor | Segregation | - |
dc.subject.keywordAuthor | Density functional | - |
dc.subject.keywordAuthor | SiGe/SiO2 interface | - |
dc.subject.keywordPlus | FINDING SADDLE-POINTS | - |
dc.subject.keywordPlus | AB-INITIO | - |
dc.subject.keywordPlus | SI-SIO2 INTERFACE | - |
dc.subject.keywordPlus | SI/SIO2 INTERFACE | - |
dc.subject.keywordPlus | DIFFUSION | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordPlus | SIGE | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | SI1-XGEX | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.