Tunnel Field Effect Transistor with an Electron-Hole Bilayer Induced by a Symmetrically Arranged Double-gate

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dc.contributor.authorJeong, Woo-Jin-
dc.contributor.authorKim, Tae Kyun-
dc.contributor.authorMoon, Jung Min-
dc.contributor.authorShin, Min-Cheol-
dc.contributor.authorLee, Seok-Hee-
dc.date.accessioned2015-03-30T01:30:07Z-
dc.date.available2015-03-30T01:30:07Z-
dc.date.created2015-01-06-
dc.date.issued2014-12-08-
dc.identifier.citationISPSA-2014, v., no., pp. --
dc.identifier.urihttp://hdl.handle.net/10203/194571-
dc.languageENG-
dc.publisherISPSA-2014-
dc.titleTunnel Field Effect Transistor with an Electron-Hole Bilayer Induced by a Symmetrically Arranged Double-gate-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.publicationnameISPSA-2014-
dc.identifier.conferencecountrySouth Korea-
dc.contributor.localauthorJeong, Woo-Jin-
dc.contributor.localauthorKim, Tae Kyun-
dc.contributor.localauthorMoon, Jung Min-
dc.contributor.localauthorShin, Min-Cheol-
dc.contributor.localauthorLee, Seok-Hee-
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EE-Conference Papers(학술회의논문)
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