Boron diffusion mechanism and effect of interface Ge atoms in Si/SiO2 and SiGe/SiO2 interfaces

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dc.contributor.authorKim, Geun Myeong-
dc.contributor.authorOh, Young-Jun-
dc.contributor.author이창휘-
dc.contributor.authorChang, Kee-Joo-
dc.date.accessioned2015-03-27T05:57:05Z-
dc.date.available2015-03-27T05:57:05Z-
dc.date.created2015-01-06-
dc.date.issued2014-03-
dc.identifier.citation2014 APS March Meeting, v., no., pp. --
dc.identifier.urihttp://hdl.handle.net/10203/194361-
dc.languageENG-
dc.publisherAPS-
dc.titleBoron diffusion mechanism and effect of interface Ge atoms in Si/SiO2 and SiGe/SiO2 interfaces-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.publicationname2014 APS March Meeting-
dc.identifier.conferencecountryUnited States-
dc.contributor.localauthorKim, Geun Myeong-
dc.contributor.localauthorOh, Young-Jun-
dc.contributor.localauthorChang, Kee-Joo-
dc.contributor.nonIdAuthor이창휘-
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PH-Conference Papers(학술회의논문)
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