DC Field | Value | Language |
---|---|---|
dc.contributor.author | Choi, Sukhwan | ko |
dc.contributor.author | Kim, Hyun-Sik | ko |
dc.contributor.author | Jung, Seungchul | ko |
dc.contributor.author | Sung, Si-Duk | ko |
dc.contributor.author | Yuk, Young-Sub | ko |
dc.contributor.author | Yim, Hyuck-Sang | ko |
dc.contributor.author | Shin, Yoonjae | ko |
dc.contributor.author | Cheon, Jun-Ho | ko |
dc.contributor.author | Ahn, Changyong | ko |
dc.contributor.author | Kim, Taekseung | ko |
dc.contributor.author | Kim, Yongki Brave | ko |
dc.contributor.author | Cho, Gyu-Hyeong | ko |
dc.date.accessioned | 2015-01-29T07:00:19Z | - |
dc.date.available | 2015-01-29T07:00:19Z | - |
dc.date.created | 2014-11-21 | - |
dc.date.created | 2014-11-21 | - |
dc.date.created | 2014-11-21 | - |
dc.date.created | 2014-11-21 | - |
dc.date.issued | 2014-11 | - |
dc.identifier.citation | IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, v.61, no.11, pp.3165 - 3174 | - |
dc.identifier.issn | 1549-8328 | - |
dc.identifier.uri | http://hdl.handle.net/10203/193811 | - |
dc.description.abstract | A PRAM write driver with an auto-scaling overdrive method is presented. The proposed overdrive method significantly reduces the rise time of the cell-current pulse for bit-line parasitic components of 3 pF and 6 k Omega, and it lowers the complexity of the overdrive control using an adaptive charge amplification technique. A rise time of less than 15 ns is achieved and shortened up to 4.7 times, and the total write-throughput is increased. The rise time is reduced consistently for all levels of the target-current by the auto-scaling effect. Therefore, cell heating control becomes more linear in program-and-verify (PNV) operation. Due to its simple adding-on structure, it is easily compatible with a conventional write driver. A prototype chip was implemented using a 0.18-mu m CMOS process. It is also applicable to smaller-scale technology. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | Auto-Scaling Overdrive Method Using Adaptive Charge Amplification for PRAM Write Performance Enhancement | - |
dc.type | Article | - |
dc.identifier.wosid | 000344467500012 | - |
dc.identifier.scopusid | 2-s2.0-84908455751 | - |
dc.type.rims | ART | - |
dc.citation.volume | 61 | - |
dc.citation.issue | 11 | - |
dc.citation.beginningpage | 3165 | - |
dc.citation.endingpage | 3174 | - |
dc.citation.publicationname | IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS | - |
dc.identifier.doi | 10.1109/TCSI.2014.2334813 | - |
dc.contributor.localauthor | Kim, Hyun-Sik | - |
dc.contributor.localauthor | Cho, Gyu-Hyeong | - |
dc.contributor.nonIdAuthor | Yim, Hyuck-Sang | - |
dc.contributor.nonIdAuthor | Shin, Yoonjae | - |
dc.contributor.nonIdAuthor | Cheon, Jun-Ho | - |
dc.contributor.nonIdAuthor | Ahn, Changyong | - |
dc.contributor.nonIdAuthor | Kim, Taekseung | - |
dc.contributor.nonIdAuthor | Kim, Yongki Brave | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Multi-level cell (MLC) | - |
dc.subject.keywordAuthor | overdrive | - |
dc.subject.keywordAuthor | phase change random access memory (PRAM) | - |
dc.subject.keywordAuthor | phase-change memory | - |
dc.subject.keywordAuthor | program-and-verify (PNV) | - |
dc.subject.keywordAuthor | write driver | - |
dc.subject.keywordAuthor | Multi-level cell (MLC) | - |
dc.subject.keywordAuthor | overdrive | - |
dc.subject.keywordAuthor | phase change random access memory (PRAM) | - |
dc.subject.keywordAuthor | phase-change memory | - |
dc.subject.keywordAuthor | program-and-verify (PNV) | - |
dc.subject.keywordAuthor | write driver | - |
dc.subject.keywordAuthor | Multi-level cell (MLC) | - |
dc.subject.keywordAuthor | overdrive | - |
dc.subject.keywordAuthor | phase change random access memory (PRAM) | - |
dc.subject.keywordAuthor | phase-change memory | - |
dc.subject.keywordAuthor | program-and-verify (PNV) | - |
dc.subject.keywordAuthor | write driver | - |
dc.subject.keywordPlus | PHASE-CHANGE MEMORY | - |
dc.subject.keywordPlus | TECHNOLOGY | - |
dc.subject.keywordPlus | THROUGHPUT | - |
dc.subject.keywordPlus | PHASE-CHANGE MEMORY | - |
dc.subject.keywordPlus | TECHNOLOGY | - |
dc.subject.keywordPlus | THROUGHPUT | - |
dc.subject.keywordPlus | PHASE-CHANGE MEMORY | - |
dc.subject.keywordPlus | TECHNOLOGY | - |
dc.subject.keywordPlus | THROUGHPUT | - |
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