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Graphene as anode electrode for colloidal quantum dots based light emitting diodes

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dc.contributor.authorKlekachev, Alexander V.ko
dc.contributor.authorKuznetsov, Sergey N.ko
dc.contributor.authorAsselberghs, Ingeko
dc.contributor.authorCantoro, Mircoko
dc.contributor.authorMun, Jeong-Hunko
dc.contributor.authorCho, Byung-Jinko
dc.contributor.authorStesmans, Andre L.ko
dc.contributor.authorHeyns, Marc M.ko
dc.contributor.authorDe Gendt, Stefanko
dc.date.accessioned2015-01-27T02:12:44Z-
dc.date.available2015-01-27T02:12:44Z-
dc.date.created2013-09-05-
dc.date.created2013-09-05-
dc.date.issued2013-07-
dc.identifier.citationAPPLIED PHYSICS LETTERS, v.103, no.4-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10203/193073-
dc.description.abstractGraphene films demonstrating low sheet resistance and high transparency in the visible light range are promising to be used as electrodes for light-emitting applications. In this work, we report the implementation of single layer graphene as hole injecting electrode for CdSe/ZnS quantum dot-light emitting diodes (QD-LED). We compare graphene vs. indium-tin-oxide (ITO)-based anode junctions by electroluminescence intensity performance of QD-LEDs. Our results demonstrate better hole injection efficiency for the graphene-based electrode at technologically relevant current densities J < 0.4 A/cm(2), therefore, recommending single layer graphene as a valuable alternative to replace ITO in QD-LED technology. (C) 2013 AIP Publishing LLC.-
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.subjectINDIUM TIN OXIDE-
dc.subjectWORK FUNCTION-
dc.subjectELECTROLUMINESCENCE-
dc.subjectFILMS-
dc.subjectNANOCRYSTALS-
dc.subjectSPECTROSCOPY-
dc.subjectDEVICES-
dc.subjectSINGLE-
dc.subjectBRIGHT-
dc.subjectLAYERS-
dc.titleGraphene as anode electrode for colloidal quantum dots based light emitting diodes-
dc.typeArticle-
dc.identifier.wosid000322406600102-
dc.identifier.scopusid2-s2.0-84884994472-
dc.type.rimsART-
dc.citation.volume103-
dc.citation.issue4-
dc.citation.publicationnameAPPLIED PHYSICS LETTERS-
dc.identifier.doi10.1063/1.4816745-
dc.contributor.localauthorCho, Byung-Jin-
dc.contributor.nonIdAuthorKlekachev, Alexander V.-
dc.contributor.nonIdAuthorKuznetsov, Sergey N.-
dc.contributor.nonIdAuthorAsselberghs, Inge-
dc.contributor.nonIdAuthorCantoro, Mirco-
dc.contributor.nonIdAuthorStesmans, Andre L.-
dc.contributor.nonIdAuthorHeyns, Marc M.-
dc.contributor.nonIdAuthorDe Gendt, Stefan-
dc.type.journalArticleArticle-
dc.subject.keywordPlusINDIUM TIN OXIDE-
dc.subject.keywordPlusWORK FUNCTION-
dc.subject.keywordPlusELECTROLUMINESCENCE-
dc.subject.keywordPlusFILMS-
dc.subject.keywordPlusNANOCRYSTALS-
dc.subject.keywordPlusSPECTROSCOPY-
dc.subject.keywordPlusDEVICES-
dc.subject.keywordPlusSINGLE-
dc.subject.keywordPlusBRIGHT-
dc.subject.keywordPlusLAYERS-
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