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College of Engineering(공과대학)School of Electrical Engineering(전기및전자공학부)EE-Conference Papers(학술회의논문)

Effect of Reduced Graphene Oxide Cap Layer on Electromigration Reliability of Cu Interconnect

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dc.contributor.authorYoon, Seong Junko
dc.contributor.authorChoi, Sung-Yoolko
dc.contributor.authorCho, Byung-Jinko
dc.date.accessioned2014-12-08T08:00:16Z-
dc.date.available2014-12-08T08:00:16Z-
dc.date.created2014-09-11-
dc.date.created2014-09-11-
dc.date.issued2014-05-06-
dc.identifier.citationGraphene 2014-
dc.identifier.urihttp://hdl.handle.net/10203/191328-
dc.languageEnglish-
dc.publisherGraphene 2014-
dc.titleEffect of Reduced Graphene Oxide Cap Layer on Electromigration Reliability of Cu Interconnect-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.publicationnameGraphene 2014-
dc.identifier.conferencecountryFR-
dc.identifier.conferencelocationToulouse-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorChoi, Sung-Yool-
dc.contributor.localauthorCho, Byung-Jin-
dc.contributor.nonIdAuthorYoon, Seong Jun-
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EE-Conference Papers(학술회의논문)
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