DC Field | Value | Language |
---|---|---|
dc.contributor.author | Reddy, Y. Ashok Kumar | ko |
dc.contributor.author | Ajitha, B. | ko |
dc.contributor.author | Reddy, P. Sreedhara | ko |
dc.contributor.author | Reddy, M. Siva Pratap | ko |
dc.contributor.author | Lee, Jung-Hee | ko |
dc.date.accessioned | 2014-11-12T08:58:35Z | - |
dc.date.available | 2014-11-12T08:58:35Z | - |
dc.date.created | 2014-10-06 | - |
dc.date.created | 2014-10-06 | - |
dc.date.issued | 2014-09 | - |
dc.identifier.citation | ELECTRONIC MATERIALS LETTERS, v.10, no.5, pp.907 - 913 | - |
dc.identifier.issn | 1738-8090 | - |
dc.identifier.uri | http://hdl.handle.net/10203/191088 | - |
dc.description.abstract | NiO-Ag thin films were deposited on Coming 7059 glass substrates by DC reactive magnetron sputtering technique and investigated the substrate temperature (T-s) dependent properties of NiO-Ag thin films. X-ray diffraction results showed that crystalline films can be obtained at high T-s and all films have a preferred crystal growth texture with face centered cubic (f(cc)) structure and was also confirmed by Raman studies. The grain size, transmittance, band gap, mobility and carrier concentrations were increased with T-s. Room temperature deposited films have an average roughness around 6.9 nm where as increment of T-s resulted in increased roughness up to 14 nm with nanocrykalline morphology. The optimum substrate temperature to obtain NiO-Ag films was found to be 200 degrees C. It was found that with increasing the T-s, resistivity of the films was significantly decreased. | - |
dc.language | English | - |
dc.publisher | KOREAN INST METALS MATERIALS | - |
dc.subject | PULSED-LASER DEPOSITION | - |
dc.subject | NICKEL-OXIDE FILMS | - |
dc.subject | P-TYPE NIO | - |
dc.subject | RAMAN-SCATTERING | - |
dc.subject | GROWTH | - |
dc.subject | ABSORPTION | - |
dc.subject | SURFACE | - |
dc.subject | SILVER | - |
dc.subject | SNO2 | - |
dc.title | Effect of Substrate Temperature on Structural, Optical and Electrical Properties of Sputtered NiO-Ag Nanocrystalline Thin Films | - |
dc.type | Article | - |
dc.identifier.wosid | 000341228300006 | - |
dc.identifier.scopusid | 2-s2.0-84907656316 | - |
dc.type.rims | ART | - |
dc.citation.volume | 10 | - |
dc.citation.issue | 5 | - |
dc.citation.beginningpage | 907 | - |
dc.citation.endingpage | 913 | - |
dc.citation.publicationname | ELECTRONIC MATERIALS LETTERS | - |
dc.identifier.doi | 10.1007/s13391-014-3351-z | - |
dc.contributor.localauthor | Reddy, Y. Ashok Kumar | - |
dc.contributor.nonIdAuthor | Ajitha, B. | - |
dc.contributor.nonIdAuthor | Reddy, P. Sreedhara | - |
dc.contributor.nonIdAuthor | Reddy, M. Siva Pratap | - |
dc.contributor.nonIdAuthor | Lee, Jung-Hee | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | NiO-Ag thin films | - |
dc.subject.keywordAuthor | sputtering | - |
dc.subject.keywordAuthor | substrate temperature | - |
dc.subject.keywordAuthor | X-ray diffraction | - |
dc.subject.keywordAuthor | electrical properties | - |
dc.subject.keywordPlus | PULSED-LASER DEPOSITION | - |
dc.subject.keywordPlus | NICKEL-OXIDE FILMS | - |
dc.subject.keywordPlus | P-TYPE NIO | - |
dc.subject.keywordPlus | RAMAN-SCATTERING | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | ABSORPTION | - |
dc.subject.keywordPlus | SURFACE | - |
dc.subject.keywordPlus | SILVER | - |
dc.subject.keywordPlus | SNO2 | - |
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