Quantum Simulation of Si, GaAs, GaSb, and Ge Channel Ultra-Thin-Body Double-gate Negative Capacitance FETs
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Lee, Jaehyun | ko |
| dc.contributor.author | Jeong, Woo-Jin | ko |
| dc.contributor.author | Kang, Doo Hyung | ko |
| dc.contributor.author | Shin, Mincheol | ko |
| dc.date.accessioned | 2014-09-01T08:43:46Z | - |
| dc.date.available | 2014-09-01T08:43:46Z | - |
| dc.date.created | 2014-08-12 | - |
| dc.date.created | 2014-08-12 | - |
| dc.date.created | 2014-08-12 | - |
| dc.date.issued | 2014-06-09 | - |
| dc.identifier.citation | 2014 IEEE Silicon Nanoelectronics Workshop | - |
| dc.identifier.uri | http://hdl.handle.net/10203/189683 | - |
| dc.language | English | - |
| dc.publisher | IEEE | - |
| dc.title | Quantum Simulation of Si, GaAs, GaSb, and Ge Channel Ultra-Thin-Body Double-gate Negative Capacitance FETs | - |
| dc.type | Conference | - |
| dc.identifier.wosid | 000393376800030 | - |
| dc.identifier.scopusid | 2-s2.0-84963815240 | - |
| dc.type.rims | CONF | - |
| dc.citation.publicationname | 2014 IEEE Silicon Nanoelectronics Workshop | - |
| dc.identifier.conferencecountry | US | - |
| dc.contributor.localauthor | Shin, Mincheol | - |
| dc.contributor.nonIdAuthor | Kang, Doo Hyung | - |
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