Dual-Material Gate Schottky Barrier UTB DG MOSFETs with Ge and III-V Channel
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Choi, Won Chul | ko |
| dc.contributor.author | Lee, Jaehyun | ko |
| dc.contributor.author | Shin, Mincheol | ko |
| dc.date.accessioned | 2014-09-01T08:43:45Z | - |
| dc.date.available | 2014-09-01T08:43:45Z | - |
| dc.date.created | 2014-08-12 | - |
| dc.date.created | 2014-08-12 | - |
| dc.date.created | 2014-08-12 | - |
| dc.date.issued | 2014-06-09 | - |
| dc.identifier.citation | 2014 IEEE Silicon Nanoelectronics Workshop | - |
| dc.identifier.uri | http://hdl.handle.net/10203/189682 | - |
| dc.language | English | - |
| dc.publisher | IEEE | - |
| dc.title | Dual-Material Gate Schottky Barrier UTB DG MOSFETs with Ge and III-V Channel | - |
| dc.type | Conference | - |
| dc.identifier.wosid | 000393376800090 | - |
| dc.identifier.scopusid | 2-s2.0-84963799595 | - |
| dc.type.rims | CONF | - |
| dc.citation.publicationname | 2014 IEEE Silicon Nanoelectronics Workshop | - |
| dc.identifier.conferencecountry | US | - |
| dc.contributor.localauthor | Shin, Mincheol | - |
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