We review our progress on the laser processing of semiconductor
microstructures and nanostructures for functional devices.
Fundamental research conducted to understand the
melt-mediated phase transformations induced by nanosecond
laser irradiation in thin semiconductor films is presented. A
detailed experimental study analyzed the physical mechanisms
of the explosive crystallization in amorphous germanium
that produces large area self-sustained crystal growth.
The double laser crystallization method that combines a
nanosecond laser pulse and a modulated microsecond laser
beam was shown to produce ultra-large grain polycrystalline
silicon, enabling fabrication of thin film transistor devices of
high performance from amorphous silicon films. The crystal
growth process was imaged by temporally resolved photography.
Non-melt Excimer Laser annealing of thin silicon-oninsulator
films for dopant activation was demonstrated. Applying
multiple laser pulses below the melting threshold effected
solid phase annealing of the single crystalline silicon
films. Semiconductor nanowires are one-dimensional nanostructures
that have displayed the potential to be used with
low-cost flexible plastic substrates for applications such as
large-area displays and sensor arrays. The excimer laser annealing
of silicon nanowires is demonstrated as an alternative
to conventional thermal annealing for dopant activation. The
optical absorption of the nanowires is discussed and the
effect of parameters such as fluence and number of pulses is
investigated. The interaction of laser pulses with silicon
nanowires is investigated through numerical simulations.
Schematic depiction of pulsed laser annealing of generic
semiconductor structures. Specific structures are shown in
bottom inset circles.