Modular Structure of Compact Model for Memristive Devices

Abstract

A modular compact model for memristors which describes a wide range of memristive devices is presented. Its modular structure enables the modeling of various device behaviors by adopting different functions inside the comprising blocks. Rooted from the theoretical analysis on ideal memristors, the window function of the model is uniquely based on the constitutive relationship between charge and flux. This not only solves the stability issue from previously reported models, but also reveals that an equivalent charge-flux constitutive relationship can always be obtained from a variety of memristive devices. Simulations on three types of memristive devices demonstrate that the model is able to reflect common memristive device properties such as limited memristance switching range, linear/nonlinear memristance switching rate, threshold voltages for SET/RESET, nonlinear I-V characteristics, and device parameters with variations.