Doping-Free Intrinsic Amorphous Silicon Thin-Film Solar Cell Having a Simple Structure of Glass/SnO2/MoO3/i-a-Si/LiF/Al
We fabricated doping-free intrinsic amorphous silicon (i-a-Si) thin-film solar cells having a structure of glass/SnO2/MoO3/i-a-Si/LiF/Al. The short-circuit current density of the cell markedly increased while the open-circuit voltage and fill factor were low due to a lower work-function of the MoO3 than that of a conventional amorphous silicon carbide film. To solve these drawbacks, we UV-treated on the MoO3 layer, obtaining a greatly enhanced conversion efficiency of 6.42%.
- Issue Date
- 2014-01
- Language
- English
- Article Type
- Article
- Citation
IEEE ELECTRON DEVICE LETTERS, v.35, no.1, pp.96 - 98
- ISSN
- 0741-3106
- Appears in Collection
- EE-Journal Papers(저널논문)
- Files in This Item
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