Melt-mediated coalescence of solution-deposited ZnO nanoparticles by excimer laser annealing for thin-film transistor fabrication

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Nanoparticle solutions are considered promising for realizing low cost printable high performance flexible electronics. In this letter, excimer laser annealing (ELA) was employed to induce melting of solution-deposited ZnO nanoparticles and form electrically conductive porous films. The properties of the films were characterized by scanning electron microscopy, high-resolution transmission electron microscopy, DC conductance, and photoluminescence measurements. Thin-film field-effect transistors have been fabricated by ELA without the use of conventional vacuum or any high temperature thermal annealing processes. The transistors show n-type accumulation mode behavior with mobility greater than 0.1 cm(2)/V s and current on/off ratios of more than 10(4). Optimization and control of the laser processing parameters minimized thermal impact on the substrate. This technique can be beneficial in the fabrication of metal oxide based electronics on heat sensitive flexible plastic substrates using low-cost, large-area solution processing combined with direct printing techniques.
Publisher
SPRINGER
Issue Date
2009-01
Language
English
Article Type
Article
Keywords

ROOM-TEMPERATURE

Citation

APPLIED PHYSICS A-MATERIALS SCIENCE PROCESSING, v.94, no.1, pp.111 - 115

ISSN
0947-8396
DOI
10.1007/s00339-008-4925-0
URI
http://hdl.handle.net/10203/18844
Appears in Collection
ME-Journal Papers(저널논문)
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