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College of Engineering(공과대학)Dept. of Materials Science and Engineering(신소재공학과)MS-Conference Papers(학술회의논문)

Study of Growth Mechanism of doped Graphene on SiC Substrate using XeCl Excimer Laser

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dc.contributor.authorChoi, Insungko
dc.contributor.authorJung, Dae Yoolko
dc.contributor.authorChoi, Sung-Yoolko
dc.contributor.authorLee, KeonJaeko
dc.date.accessioned2014-08-28T01:41:47Z-
dc.date.available2014-08-28T01:41:47Z-
dc.date.created2013-11-28-
dc.date.created2013-11-28-
dc.date.issued2013-12-05-
dc.identifier.citation2013 MRS Fall Meeting & Exhibit-
dc.identifier.urihttp://hdl.handle.net/10203/187592-
dc.languageEnglish-
dc.publisherMaterials Research Society-
dc.titleStudy of Growth Mechanism of doped Graphene on SiC Substrate using XeCl Excimer Laser-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.publicationname2013 MRS Fall Meeting & Exhibit-
dc.identifier.conferencecountryUS-
dc.identifier.conferencelocationBoston, Massachusetts-
dc.contributor.localauthorChoi, Sung-Yool-
dc.contributor.localauthorLee, KeonJae-
dc.contributor.nonIdAuthorChoi, Insung-
dc.contributor.nonIdAuthorJung, Dae Yool-
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EE-Conference Papers(학술회의논문)MS-Conference Papers(학술회의논문)
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