The contact oriented electrical properties of the GaN nanowire FET
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Yu, Han Young | ko |
| dc.contributor.author | Park, Chan Woo | ko |
| dc.contributor.author | Pi, Ung Hwan | ko |
| dc.contributor.author | Choi, Sung-Yool | ko |
| dc.date.accessioned | 2014-08-28T01:10:49Z | - |
| dc.date.available | 2014-08-28T01:10:49Z | - |
| dc.date.created | 2013-05-13 | - |
| dc.date.created | 2013-05-13 | - |
| dc.date.issued | 2004-06-28 | - |
| dc.identifier.citation | The International Conference on Synthetic Metals (ICSM 2004) | - |
| dc.identifier.uri | http://hdl.handle.net/10203/187545 | - |
| dc.language | English | - |
| dc.publisher | ICSM | - |
| dc.title | The contact oriented electrical properties of the GaN nanowire FET | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.publicationname | The International Conference on Synthetic Metals (ICSM 2004) | - |
| dc.identifier.conferencecountry | AT | - |
| dc.identifier.conferencelocation | Wollongong | - |
| dc.contributor.localauthor | Choi, Sung-Yool | - |
| dc.contributor.nonIdAuthor | Yu, Han Young | - |
| dc.contributor.nonIdAuthor | Park, Chan Woo | - |
| dc.contributor.nonIdAuthor | Pi, Ung Hwan | - |
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