DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, Jong Kyung | ko |
dc.contributor.author | Lee, Ki-Hong | ko |
dc.contributor.author | Pyi, Seung Ho | ko |
dc.contributor.author | Lee, Seok-Hee | ko |
dc.contributor.author | Cho, Byung Jin | ko |
dc.date.accessioned | 2014-08-27T01:00:46Z | - |
dc.date.available | 2014-08-27T01:00:46Z | - |
dc.date.created | 2014-03-06 | - |
dc.date.created | 2014-03-06 | - |
dc.date.issued | 2014-04 | - |
dc.identifier.citation | SOLID-STATE ELECTRONICS, v.94, pp.86 - 90 | - |
dc.identifier.issn | 0038-1101 | - |
dc.identifier.uri | http://hdl.handle.net/10203/187286 | - |
dc.description.abstract | A soft program method is proposed for charge-trap flash (CTF) memory devices. By adding a subsequent small positive gate pulse after main Fowler-Nordheim (FN) injection programming, early charge loss is greatly reduced. The multi-level cell performance as well as the initial flat-band voltage (V-FB) instability can thereby be improved by removing the trapped electrons at the shallow traps in the blocking oxide layer. The proposed soft program method is a simple but very effective way to improve the fast retention property without changing the memory structure, especially for cases where the j-value of the blocking oxide is high. (C) 2014 Elsevier Ltd. All rights reserved. | - |
dc.language | English | - |
dc.publisher | PERGAMON-ELSEVIER SCIENCE LTD | - |
dc.subject | NAND FLASH | - |
dc.subject | RETENTION | - |
dc.subject | ERASE | - |
dc.title | Improvement of the multi-level cell performance by a soft program method in flash memory devices | - |
dc.type | Article | - |
dc.identifier.wosid | 000334097000017 | - |
dc.identifier.scopusid | 2-s2.0-84897898618 | - |
dc.type.rims | ART | - |
dc.citation.volume | 94 | - |
dc.citation.beginningpage | 86 | - |
dc.citation.endingpage | 90 | - |
dc.citation.publicationname | SOLID-STATE ELECTRONICS | - |
dc.identifier.doi | 10.1016/j.sse.2014.02.012 | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Lee, Seok-Hee | - |
dc.contributor.localauthor | Cho, Byung Jin | - |
dc.contributor.nonIdAuthor | Lee, Ki-Hong | - |
dc.contributor.nonIdAuthor | Pyi, Seung Ho | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Reliability | - |
dc.subject.keywordAuthor | Soft program | - |
dc.subject.keywordAuthor | TANOS | - |
dc.subject.keywordAuthor | Blocking oxide | - |
dc.subject.keywordPlus | NAND FLASH | - |
dc.subject.keywordPlus | RETENTION | - |
dc.subject.keywordPlus | ERASE | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.