DC Field | Value | Language |
---|---|---|
dc.contributor.author | Nho, Hyun Woo | ko |
dc.contributor.author | Kim, Jong Yun | ko |
dc.contributor.author | Wang, Jian | ko |
dc.contributor.author | Shin, Hyun-Joon | ko |
dc.contributor.author | Choi, Sung-Yool | ko |
dc.contributor.author | Yoon, Tae Hyun | ko |
dc.date.accessioned | 2014-08-26T08:19:42Z | - |
dc.date.available | 2014-08-26T08:19:42Z | - |
dc.date.created | 2013-11-22 | - |
dc.date.created | 2013-11-22 | - |
dc.date.created | 2013-11-22 | - |
dc.date.issued | 2014-01 | - |
dc.identifier.citation | JOURNAL OF SYNCHROTRON RADIATION, v.21, pp.170 - 176 | - |
dc.identifier.issn | 0909-0495 | - |
dc.identifier.uri | http://hdl.handle.net/10203/187102 | - |
dc.description.abstract | Here, an in situ probe for scanning transmission X-ray microscopy (STXM) has been developed and applied to the study of the bipolar resistive switching (BRS) mechanism in an Al/graphene oxide (GO)/Al resistive random access memory (RRAM) device. To perform in situ STXM studies at the C K-and O K-edges, both the RRAM junctions and the I-0 junction were fabricated on a single Si3N4 membrane to obtain local XANES spectra at these absorption edges with more delicate I-0 normalization. Using this probe combined with the synchrotron-based STXM technique, it was possible to observe unique chemical changes involved in the BRS process of the Al/GO/Al RRAM device. Reversible oxidation and reduction of GO induced by the externally applied bias voltages were observed at the O K-edge XANES feature located at 538.2 eV, which strongly supported the oxygen ion drift model that was recently proposed from ex situ transmission electron microscope studies. | - |
dc.language | English | - |
dc.publisher | WILEY-BLACKWELL | - |
dc.title | Scanning transmission X-ray microscopy probe for in situ mechanism study of graphene-oxide-based resistive random access memory | - |
dc.type | Article | - |
dc.identifier.wosid | 000328939400023 | - |
dc.identifier.scopusid | 2-s2.0-84891597904 | - |
dc.type.rims | ART | - |
dc.citation.volume | 21 | - |
dc.citation.beginningpage | 170 | - |
dc.citation.endingpage | 176 | - |
dc.citation.publicationname | JOURNAL OF SYNCHROTRON RADIATION | - |
dc.identifier.doi | 10.1107/S1600577513026696 | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Choi, Sung-Yool | - |
dc.contributor.nonIdAuthor | Nho, Hyun Woo | - |
dc.contributor.nonIdAuthor | Kim, Jong Yun | - |
dc.contributor.nonIdAuthor | Wang, Jian | - |
dc.contributor.nonIdAuthor | Shin, Hyun-Joon | - |
dc.contributor.nonIdAuthor | Yoon, Tae Hyun | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | in situ | - |
dc.subject.keywordAuthor | scanning transmission X-ray microscopy | - |
dc.subject.keywordAuthor | STXM | - |
dc.subject.keywordAuthor | graphene oxide | - |
dc.subject.keywordAuthor | GO-RRAM | - |
dc.subject.keywordAuthor | bipolar resistive switching mechanism | - |
dc.subject.keywordAuthor | oxygen ion drift model | - |
dc.subject.keywordPlus | CARBON NANOTUBES | - |
dc.subject.keywordPlus | SPECTROMICROSCOPY | - |
dc.subject.keywordPlus | ABSORPTION | - |
dc.subject.keywordPlus | NANOSCALE | - |
dc.subject.keywordPlus | PARTICLES | - |
dc.subject.keywordPlus | SPECTROSCOPY | - |
dc.subject.keywordPlus | BLENDS | - |
dc.subject.keywordPlus | DEVICE | - |
dc.subject.keywordPlus | STXM | - |
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