DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, MY | ko |
dc.contributor.author | Kim, YH | ko |
dc.contributor.author | Lee, NH | ko |
dc.contributor.author | Lee, Yong Soo | ko |
dc.contributor.author | Lee, Hee Chul | ko |
dc.date.accessioned | 2010-05-18T01:54:02Z | - |
dc.date.available | 2010-05-18T01:54:02Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2006-06 | - |
dc.identifier.citation | JOURNAL OF ELECTRONIC MATERIALS, v.35, pp.1429 - 1433 | - |
dc.identifier.issn | 0361-5235 | - |
dc.identifier.uri | http://hdl.handle.net/10203/18405 | - |
dc.description.abstract | In this study, we investigated the effects of gamma radiation on ZnS/CdTe-passivated HgCdTe photodiodes that were fabricated with one of two different surface treatments using bromine, Br-2, or hydrazine, N2H4. Unlike the ZnS-passivated HgCdTe photodiodes, the ZnS/CdTe-passivated HgCdTe photodiodes showed no degradation in resistance-area product at zero bias (ROA) values after gamma irradiation of up to 1 Mrad. However, there is a significant difference between the bromine- and hydrazine-treated samples. Regardless of the dose of gamma radiation, there was little change in the forward current characteristics of the hydrazine-treated diode in comparison with the conventional bromine-treated diode. The hydrazine-treated diode showed fairly uniform R(0)A values of > 10(7) Omega-cm(2) up to 1 Mrad of gamma irradiation, whereas the bromine-treated diode showed an abrupt change in R(0)A values from similar to 10(6) Omega-cm(2) to similar to 10(7) Omega-cm(2) after gamma irradiation. Therefore, for use in a gamma radiation environment, the best combination for high-performance HgCdTe photodiodes is a ZnS/CdTe passivant that has been treated with hydrazine. | - |
dc.language | English | - |
dc.language.iso | en_US | en |
dc.publisher | SPRINGER | - |
dc.subject | ELECTRICAL-PROPERTIES | - |
dc.subject | SURFACE-TREATMENT | - |
dc.subject | ZNS | - |
dc.subject | INTERFACES | - |
dc.title | A comparison of gamma radiation effects on bromine- and hydrazine-treated HgCdTe photodiodes | - |
dc.type | Article | - |
dc.identifier.wosid | 000238819400048 | - |
dc.identifier.scopusid | 2-s2.0-33746285113 | - |
dc.type.rims | ART | - |
dc.citation.volume | 35 | - |
dc.citation.beginningpage | 1429 | - |
dc.citation.endingpage | 1433 | - |
dc.citation.publicationname | JOURNAL OF ELECTRONIC MATERIALS | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Lee, Hee Chul | - |
dc.contributor.nonIdAuthor | Lee, MY | - |
dc.contributor.nonIdAuthor | Kim, YH | - |
dc.contributor.nonIdAuthor | Lee, NH | - |
dc.type.journalArticle | Article; Proceedings Paper | - |
dc.subject.keywordAuthor | bromine | - |
dc.subject.keywordAuthor | C-V | - |
dc.subject.keywordAuthor | HgCdTe | - |
dc.subject.keywordAuthor | hydrazine | - |
dc.subject.keywordAuthor | I-V | - |
dc.subject.keywordAuthor | photodiode | - |
dc.subject.keywordPlus | ELECTRICAL-PROPERTIES | - |
dc.subject.keywordPlus | SURFACE-TREATMENT | - |
dc.subject.keywordPlus | ZNS | - |
dc.subject.keywordPlus | INTERFACES | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.