DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, B | ko |
dc.contributor.author | Lee, Hee Chul | ko |
dc.date.accessioned | 2010-05-13T08:42:36Z | - |
dc.date.available | 2010-05-13T08:42:36Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2002-08 | - |
dc.identifier.citation | ELECTRONICS LETTERS, v.38, no.16, pp.854 - 855 | - |
dc.identifier.issn | 0013-5194 | - |
dc.identifier.uri | http://hdl.handle.net/10203/18296 | - |
dc.description.abstract | A smart time delay and integration (TDI) readout circuit is suggested which performs background suppression, cell-to-cell non-uniformity compensation, and dead pixel correction. Using the smart TDI readout circuit, the integration capacitor area occupying almost the whole area of a unit-cell can be reduced to one-fifth and transimpedance gain can increase by five times. From measurement results, it is found that the skimming current error for a few hundred nA background current is < 1.25 nA corresponding to LSB/2 of ADC and the non-uniformity introduced by cell-to-cell background current variation is reduced to 1.02 nA. | - |
dc.language | English | - |
dc.language.iso | en_US | en |
dc.publisher | IEE-INST ELEC ENG | - |
dc.title | Smart TDI readout circuit for long-wavelength IR detector | - |
dc.type | Article | - |
dc.identifier.wosid | 000177644200008 | - |
dc.identifier.scopusid | 2-s2.0-0036683793 | - |
dc.type.rims | ART | - |
dc.citation.volume | 38 | - |
dc.citation.issue | 16 | - |
dc.citation.beginningpage | 854 | - |
dc.citation.endingpage | 855 | - |
dc.citation.publicationname | ELECTRONICS LETTERS | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Lee, Hee Chul | - |
dc.contributor.nonIdAuthor | Kim, B | - |
dc.type.journalArticle | Article | - |
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