A Cantilever-Type Uncooled Infrared Detector With High Fill-Factor and Low-Noise Characteristic

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dc.contributor.authorKwon, Il-Woongko
dc.contributor.authorSon, Hyuck-Junko
dc.contributor.authorKim, Dong-Sooko
dc.contributor.authorHwang, Chi-Hoko
dc.contributor.authorLee, Yong-Sooko
dc.contributor.authorYu, Byung-Gonko
dc.contributor.authorLee, Hee-Chulko
dc.date.accessioned2010-05-13T08:37:20Z-
dc.date.available2010-05-13T08:37:20Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2009-06-
dc.identifier.citationIEEE ELECTRON DEVICE LETTERS, v.30, pp.635 - 637-
dc.identifier.issn0741-3106-
dc.identifier.urihttp://hdl.handle.net/10203/18295-
dc.description.abstractA capacitive microcantilever-type infrared (IR) detector having a unique structure that has high immunity to thermomechanical noise (TM-noise) is proposed. The device has a capacitive readout scheme and is compared with a conventional design using the same readout method by finite element model simulation. The total cantilever length was halved, compared with the conventional device structure, in order to increase the device's spring constant, and the IR absorber area was consequently increased as the portion of the leg in the given pixel area is decreased. Large spring constant and increased absorber area are the main causes of the TM-noise reduction. The feasibility of the device was shown by fabrication, and measured parameters demonstrated the structure's superiority. It was shown that the proposed structure potentially has low TM-noise and an overall noise-equivalent temperature difference (NETD) value that is lower than that of the conventional designed device. The NETD of the proposed device was found to be 5.7 mK.-
dc.languageEnglish-
dc.language.isoen_USen
dc.publisherIEEE-
dc.subjectPERFORMANCE-
dc.titleA Cantilever-Type Uncooled Infrared Detector With High Fill-Factor and Low-Noise Characteristic-
dc.typeArticle-
dc.identifier.wosid000266409200018-
dc.identifier.scopusid2-s2.0-67649340957-
dc.type.rimsART-
dc.citation.volume30-
dc.citation.beginningpage635-
dc.citation.endingpage637-
dc.citation.publicationnameIEEE ELECTRON DEVICE LETTERS-
dc.identifier.doi10.1109/LED.2009.2013221-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorLee, Hee-Chul-
dc.contributor.nonIdAuthorLee, Yong-Soo-
dc.contributor.nonIdAuthorYu, Byung-Gon-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorFill factor-
dc.subject.keywordAuthormicrocantilever-type infrared (IR) detector-
dc.subject.keywordAuthornoise-equivalent temperature difference (NETD)-
dc.subject.keywordAuthorthermomechanical noise (TM-noise)-
dc.subject.keywordPlusPERFORMANCE-
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