A highly noise-immune touch controller using Filtered-Delta-Integration and a charge-interpolation technique for 10.1-inch capacitive touch-screen panels

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dc.contributor.authorYang, Jun-Hyeokko
dc.contributor.authorPark, Sang-Huiko
dc.contributor.authorChoi, Jung-Minko
dc.contributor.authorKim, Hyun-Sikko
dc.contributor.authorPark, Chang-Byungko
dc.contributor.authorRyu, Seung-Takko
dc.contributor.authorCho, Gyu-Hyeongko
dc.date.accessioned2013-12-06T01:12:30Z-
dc.date.available2013-12-06T01:12:30Z-
dc.date.created2013-10-04-
dc.date.created2013-10-04-
dc.date.issued2013-02-20-
dc.identifier.citation2013 IEEE International Solid-State Circuits Conference, ISSCC 2013, pp.390 - 391-
dc.identifier.issn0193-6530-
dc.identifier.urihttp://hdl.handle.net/10203/182765-
dc.description.abstractCapacitive touch-screen panels (TSPs) are widely used in recent high-end mobile products on the basis of their high quality of touch features, as well as superior visibility and durability [1-5]. Capacitive TSPs can be classified into self-capacitance [1,2] or mutual-capacitance [3-5] types, according to the sensing mechanism. Compared with the self-capacitance types, which offer low cost and high scan frequency from the simple line-sensing scheme, the mutual-capacitance types, which read out all sensor pixels, are presently widely preferred due to their multi-touch capabilities. However, the reduced sensing time for each sensor makes it difficult to achieve a high signal-to-noise ratio (SNR). Therefore, good noise performance in the analog front-end of the touch controller is essential for mutual-capacitance type TSPs. © 2013 IEEE.-
dc.languageEnglish-
dc.publisherIEEE-
dc.titleA highly noise-immune touch controller using Filtered-Delta-Integration and a charge-interpolation technique for 10.1-inch capacitive touch-screen panels-
dc.typeConference-
dc.identifier.wosid000366612300165-
dc.identifier.scopusid2-s2.0-84876527235-
dc.type.rimsCONF-
dc.citation.beginningpage390-
dc.citation.endingpage391-
dc.citation.publicationname2013 IEEE International Solid-State Circuits Conference, ISSCC 2013-
dc.identifier.conferencecountryUS-
dc.identifier.conferencelocationSan Francisco, CA-
dc.identifier.doi10.1109/ISSCC.2013.6487783-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorKim, Hyun-Sik-
dc.contributor.localauthorRyu, Seung-Tak-
dc.contributor.localauthorCho, Gyu-Hyeong-
dc.contributor.nonIdAuthorYang, Jun-Hyeok-
dc.contributor.nonIdAuthorPark, Sang-Hui-
dc.contributor.nonIdAuthorChoi, Jung-Min-
dc.contributor.nonIdAuthorPark, Chang-Byung-
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