DC Field | Value | Language |
---|---|---|
dc.contributor.advisor | Moon, Hie-Tae | - |
dc.contributor.advisor | 문희태 | - |
dc.contributor.author | Youn, Jun-Ho | - |
dc.contributor.author | 윤준호 | - |
dc.date.accessioned | 2013-09-12T05:00:14Z | - |
dc.date.available | 2013-09-12T05:00:14Z | - |
dc.date.issued | 2011 | - |
dc.identifier.uri | http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=482557&flag=dissertation | - |
dc.identifier.uri | http://hdl.handle.net/10203/182373 | - |
dc.description | 학위논문(박사) - 한국과학기술원 : 물리학과, 2011. 8, [ viii, 136 p. ] | - |
dc.description.abstract | Recently organic devices are widely investigated in the world. In this study we are investigating the transport physical parameters like mobility, trap energy levels and density of states of OLEDs and OPVs by several methods to contribute the under- standing physics. To extract the mobility of the Alq3 and P3HT:PCBM-71, we use the photo-CELIV(charge extraction in linearly increasing voltage) and compare with results of other groups. Mobility of thin film device (~0.1 um) could be measured by photo-CELIV while ToF method needs thick devices ( > 1 um) because of pene- tration depth. For the trap energy level, we could use the several methods like trap- limited SCLC(space charge limited current), PICTS (photo-induced current transient spectroscopy) and turn-off dynamics of transient-electroluminescence(EL). We extract the trap energy level of P3HT:PCBM-71 as 70 meV by trap-limited SCLC and PICTS. For phosphorescent OLEDs triplet trap energy levels are extracted by temperature de- pendence of dispersive parameter. The triplet trap energy levels represent the effective energy gap between host and dopant triplet levels. By impedance spectroscopy, junc- tion parameters and density of state near HOMO level are investigated. We also could extract the attempt-to-escape frequency from temperature dependence of capacitance- frequency characteristics. Extracted attempt-to-escape frequency of P3HT:PCBM are around 108 109(s??1). Large boundary leads to small attempt-to-escape frequency. The domain sizes of P3HT in bulk heterojunction are determined by analogy with the attempt-to-escape frequency. We also fabricated the multi-layer OLEDs with new con- ductive polymers to improve the performance and stability. These HIL material are non acidic (pH 6-7) thus we avoid the damage on ITO. Eciency, driving voltage and stability are improved with new HIL1.3N because of its high work function, preventing the spike of ITO by cladding and its neutral property. | eng |
dc.language | eng | - |
dc.publisher | 한국과학기술원 | - |
dc.subject | OLED | - |
dc.subject | OPV | - |
dc.subject | Transport | - |
dc.subject | DOS | - |
dc.subject | 유기발광소자 | - |
dc.subject | 유기태양전지 | - |
dc.subject | 수송특성 | - |
dc.subject | 이동도 | - |
dc.subject | Mobility | - |
dc.title | Study on transport properties of bulk hetero-junction OPVs and simple structure OLEDs | - |
dc.title.alternative | 벌크 헤테로 정션 유기 태양전지 및 단순구조 유기발광소자의 수송특성에 대한 연구 | - |
dc.type | Thesis(Ph.D) | - |
dc.identifier.CNRN | 482557/325007 | - |
dc.description.department | 한국과학기술원 : 물리학과, | - |
dc.identifier.uid | 020075116 | - |
dc.contributor.localauthor | Moon, Hie-Tae | - |
dc.contributor.localauthor | 문희태 | - |
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