DC Field | Value | Language |
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dc.contributor.advisor | Shin, Sung-Chul | - |
dc.contributor.advisor | 신성철 | - |
dc.contributor.author | Jeon, Kun-Rok | - |
dc.contributor.author | 전건록 | - |
dc.date.accessioned | 2013-09-12T04:59:20Z | - |
dc.date.available | 2013-09-12T04:59:20Z | - |
dc.date.issued | 2013 | - |
dc.identifier.uri | http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=513569&flag=dissertation | - |
dc.identifier.uri | http://hdl.handle.net/10203/182330 | - |
dc.description | 학위논문(박사) - 한국과학기술원 : 물리학과, 2013.2, [ xvi, 112 p. ] | - |
dc.description.abstract | To maintain the rapid development of electronics, alternative technologies that go beyond downscaling of the devices are required. Spintronics, in which digital data is represented by the electron spin, may provide a solution for future electronics. In particular, semiconductor spintronics, where the unique features of ferromagnet (FMs) and semiconductors (SCs) are combined, raises the possibility to devise a new spin-based information technology. The injection, control, and detection of spin polarization in SC are the main building blocks of SC spintronics. Notably, significant progress has been recently made in establishing the two building blocks of the spin injection and detection, particularly in silicon, the mainstream SC, by developing ferromagnetic tunnel contacts, which provide a reliable and robust means for the efficient spin injection and detection in SC. Triggered by the progress in silicon, germanium has recently received significant attention because of many merits of Ge: a large spin-diffusion length due to the high carrier mobility, the possibility of spin control via non-negligible spin-orbit coupling, the feasibility of epitaxial FM/MgO tunnel contacts to the Ge employing the lattice matching of Ge with MgO, and optical spin pumping through the quasi-direct band gap of Ge. In order to utilize the merits and potential of Ge for SC-spintronic appplication, the experimental demonstration of spin injection and detection in Ge system and systematic investigation of spin phenomena in this system are crucial. This dissertation aims to investigate the issues for the development of Ge spintronics, to experimentally demonstrate the spin injection and detection in Ge by developing suitable ferromagnetic tunnel contacts to the Ge, and to provide viable routes for the realization of Ge-based spintronic devices. We develop the single-crystalline bcc CoFe/MgO(001) tunnel contacts to Ge with the proper resistance-area (RA) product, satisfying the requireme... | eng |
dc.language | eng | - |
dc.publisher | 한국과학기술원 | - |
dc.subject | normal and inverted Hanle effects | - |
dc.subject | interfacial spin depolarization | - |
dc.subject | three-terminal Hanle measurements | - |
dc.subject | crystalline ferromagnetic tunnel contacts | - |
dc.subject | germanium spintronics | - |
dc.subject | electrical spin injection and detection | - |
dc.subject | semiconductor (SC) spintronics and main building blocks | - |
dc.subject | thermal spin injection and detection | - |
dc.subject | seebeck spin tunneling and thermal spin accumulation | - |
dc.subject | 반도체 스핀트로닉스와 주요 구성요소 | - |
dc.subject | 전기적 스핀 주입과 축적 | - |
dc.subject | 강자성 터널 접합 | - |
dc.subject | 게르마늄 스핀트로닉스 | - |
dc.subject | 3단자 Hanle 측정법 | - |
dc.subject | 제벡 스핀 터널링 | - |
dc.subject | oblique Hanle effect | - |
dc.title | Study on spin injection and detection in germanium using crystalline ferromagnetic tunnel contacts | - |
dc.title.alternative | 결정성의 강자성 터널 접합을 이용한 게르마늄으로의 스핀 주입과 검출에 관한 연구 | - |
dc.type | Thesis(Ph.D) | - |
dc.identifier.CNRN | 513569/325007 | - |
dc.description.department | 한국과학기술원 : 물리학과, | - |
dc.identifier.uid | 020097079 | - |
dc.contributor.localauthor | Shin, Sung-Chul | - |
dc.contributor.localauthor | 신성철 | - |
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