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Absence of a Band Gap at the Interface of a Metal and Highly Doped Monolayer MoS2 Kerelsky, Alexander; Nipane, Ankur; Edelberg, Drew; Wang, Dennis; Zhou, Xiaodong; Motmaendadgar, Abdollah; Gao, Hui; et al, NANO LETTERS, v.17, no.10, pp.5962 - 5968, 2017-10 |
In0.53Ga0.47As Channel MOSFETs With Self-Aligned InAs Source/Drain Formed by MEE Regrowth Singisetti, Uttam; Wistey, Mark A.; Burek, Gregory J.; Baraskar, Ashish K.; Thibeault, Brian J.; Gossard, Arthur C.; Rodwell, Mark J. W.; et al, IEEE ELECTRON DEVICE LETTERS, v.30, no.11, pp.1128 - 1130, 2009-11 |
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